US 4,395,645 AGranted

MOSFET Logic inverter buffer circuit for integrated circuits

AssigneeInternational Telephone and Telegraph Corporation

InventorJoseph Pernyeszi

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Abstract

The inverter buffer circuit disclosed includes two transistorized circuits each coupled to an input circuit and an output circuit capable of carrying high current and providing full output swing between a high voltage or binary "1" and a low voltage or binary "0". Each of the two circuits include a first enhancement field effect transistor having its drain electrode connected to a drain voltage and operating as a source follower, a first depletion field effect transistor having its drain electrode and source electrode connected to back bias acting as a load for the first enhancement transistor, second and third enhancement field effect transistors having their source electrodes coupled to the back bias and interconnected to form a flip-flop controlled by the first enhancement transistor and a second depletion field effect transistor having its drain electrode coupled to the drain voltage and acting as the load for the flip-flop. The output circuit includes two depletion field effect transistors connected in series between the drain voltage and source voltage with the gate electrodes thereof connected to a different one of the two flip-flops and an output terminal coupled to the series connection between the two depletion transistors. Three embodiments of the input circuit are disclosed.

A buffer circuit for an integrated circuit comprising:

two transistorized circuits each including
a first enhancement field effect transistor having a gate electrode, a source electrode, and a drain electrode coupled to a drain voltage source,
a first depletion field effect transistor having a gate electrode coupled to a back bias source, a source electrode coupled to said back bias source, and a drain electrode coupled to said source electrode of said first enhancement transistor,
a second enhancement field effect transistor having a gate electrode, a drain electrode coupled to said drain electrode of said first depletion transistor and said source electrode of said first enhancement transistor, and a source electrode coupled to said source electrode of said first depletion transistor and said back bias source,
a second depletion field effect transistor having a gate electrode, a drain electrode coupled to said drain voltage source, and a source electrode coupled to said gate electrode of said second enhancement transistor, and
a third enhancement field effect transistor having a drain electrode coupled to said source electrode of said second depletion transistor and said gate electrode of said second enhancement transistor, a source electrode coupled to said back bias source, and a gate electrode coupled to said drain electrode of said second enhancement transistor and said source electrode of said first enhancement transistor;
an output circuit coupled to said source electrode of said second depletion transistor, said drain electrode of said third enhancement transistor and said gate electrode of said second enhancement transistor of each of said two circuits, said drain voltage source and a source voltage source;
and
an input circuit coupled to at least a selected one of said gate electrode of said first enhancement transistor of one of said two circuits and said gate electrode of said second depletion transistor of the other of said two circuits and a selected one of said gate electrode of said first enhancement transistor of said other of said two circuits and said gate electrode of said second depletion transistor of said one of said two circuits.

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Abstract

Claims22