# US 4,395,481 A · Method for the manufacture of resist structures

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- Number: US 4,395,481 A
- Document ID: US4395481A
- Status: Granted
- Kind: A
- Application number: 06/305,798
- Filed: 1981-09-25
- Granted: 1983-07-26
- Earliest claimed: 1980-09-29
- Assignees: Siemens Aktiengesellschaft
- Inventors: Siegfried Birkle; Roland Rubner; Hans Hauschildt; Eva-Maria Rissel
- Web page: https://patentgrep.com/patent/US4395481A

## CPC

- G03F 7/039: Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023)
- G05F 1/577: for plural loads
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES

## Abstract

The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.

## Claims

### Claim 1

In a method for the manufacture of resist structures on the basis of positive resists wherein a polymer material in the form of a layer or film is exposed with a predetermined pattern to short-wave UV rays and the exposed portions of the layer or film thereafter removed, the improvement wherein the polymer material comprises a copolymer of:
(a) 1 to 70 mol percent alkylmethacrylate with an alkyl radical having 1 to 4 C atoms; and
(b) 30 to 99 mol percent of an ethylenically unsaturated monomer having chlorine and/or cyan substituents.

### Claim 2 (depends on 1)

The method according to claim 1 wherein said polymer material is a copolymer of methylmethacrylate and methyl-.alpha.-chloroacrylate.

### Claim 3 (depends on 1)

The method according to claim 1 wherein said polymer material is a copolymer of methylmethacrylate and methyl-.alpha.-cyanoacrylate.