# US 4,395,467 A · Transparent conductive film having areas of high and low resistivity

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- Number: US 4,395,467 A
- Document ID: US4395467A
- Status: Granted
- Kind: A
- Application number: 06/335,707
- Filed: 1981-12-30
- Granted: 1983-07-26
- Earliest claimed: 1981-12-30
- Assignees: RCA Corporation
- Inventors: John L. Vossen, Jr.; Joseph Zelez
- Web page: https://patentgrep.com/patent/US4395467A

## CPC

- G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making}
- C04B 41/0027: {Ion-implantation, ion-irradiation or ion-injection}
- C04B 41/80: of only ceramics
- H01B 1/08: oxides
- H10F 71/138: {Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes}
- Y02E 10/50: Photovoltaic [PV] energy
- Y10S 148/128: Proton bombardment of silicon
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method of forming areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide is disclosed. The film is selectively ion implanted with protons and then annealed to lower the resistivity in the non-implanted portion.

## Claims

### Claim 1

A method of producing areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide comprising ion implanting protrons into a portion of said film and annealing the film in a reducing gas at a temperature above about 700.degree. C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.

### Claim 2 (depends on 1)

A method in accordance with claim 1, wherein the film is implanted with a dose of from about 10.sup.10 to about 10.sup.16 protons/cm.sup.2.

### Claim 3 (depends on 1)

A method in accordance with claim 1, wherein the film is annealed at a temperature from about 700.degree. C. and about 850.degree. C.

### Claim 4 (depends on 1)

A method in accordance with claim 1, wherein the film is annealed at a temperature of about 750.degree. C.

### Claim 5 (depends on 1)

A method in accordance with claim 1, where the film is annealed in a reducing gas atmosphere of hydrogen and an inert gas.

### Claim 6 (depends on 5)

A method in accordance with claim 5, wherein said atmosphere is hydrogen and nitrogen in a partial pressure ratio of 1:9.

### Claim 7

A method of forming a transparent conductive layer having areas of high and low resistivity on a substrate comprising depositing a film of indium oxide and zirconium oxide on said substrate, ion implanting protons into a portion of said film and annealing the film in reducing gas at a temperature above about 700.degree. C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.

### Claim 8 (depends on 7)

A structure produced in accordance with the method of claim 7.