# US 4,395,323 A · Apparatus for improving a sputtering process > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,395,323 A - Document ID: US4395323A - Status: Granted - Kind: A - Application number: 06/257,314 - Filed: 1981-04-17 - Granted: 1983-07-26 - Earliest claimed: 1981-04-17 - Assignees: Denton Vacuum Inc. - Inventors: Richard A. Denton; Bawa Singh - Web page: https://patentgrep.com/patent/US4395323A ## CPC - H01J 37/3438: {Electrodes other than cathode} - C23C 14/34: Sputtering - H01J 37/34: operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) - H01J 37/3408: {Planar magnetron sputtering} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract The present invention provides, in a sputtering apparatus, an anode means interposed between the cathode and the substrate (upon which material is to be deposited) which acts to intercept electrons so that they do not impinge on the substrate and which is formed to permit the material dislodged from the cathode (by impinging ions) to pass beyond the anode and be deposited on the substrate. While the present invention can be usefully employed without the aid of a magnetic field, in a preferred embodiment, the present invention is made part of a planar magnetron. ## Claims ### Claim 1 In a sputtering device, the combination of: vacuum chamber means adapted to be in a substantial state of vacuum; planar cathode means disposed within said vacuum chamber means and comprising a material to be deposited on a substrate; electrical conducting means formed into a mesh like structure whereby said mesh like structure forms a mesh anode means; said mesh anode means disposed wihtin said vacuum chamber means in close proximity to said cathode means; electrical voltage generating means connected to both said cathode means and mesh anode means to provide a sufficient voltage difference therebetween to cause a gaseous glow discharge between said cathode means and said anode means; and substrate holding means characterized by being electrically floating and located in said vacuum chamber means on the side of said mesh anode means away from said cathode means and out of the gaseous glow discharge between said cathode and anode, whereby when said gaseous glow discharge is in effect, particles of cathode material are dislodged therefrom and pass through said mesh anode means to be deposited on said substrate means and whereby a majority of the electrons resulting from said gaseous glow discharge are intercepted by said mesh anode means. ### Claim 2 (depends on 1) A sputtering device according to claim 1 wherein said electrical conducting means is formed into a frame like structure which defines an enclosure and wherein there is further included a plurality of electrically conductive wires formed into a mesh and disposed to fill said enclosure and secured to said frame like structure whereby said frame like structure holding said wire mesh forms said mesh anode means. ### Claim 3 (depends on 1) A sputtering device according to claim 1 wherein there is further included first and second magnetic pole pieces secured to said planar cathode means and disposed thereon to form a tunnel of magnetic flux therebetween, which tunnel of magnetic flux lies between said cathode and said anode and wherein substantially all of the lines of said flux lie at 45.degree. to 90.degree. with respect to an electric field between said cathode and said anode. ### Claim 4 (depends on 3) A sputtering device according to claim 3 wherein said first pole piece is a continuous piece with an aperture in the center of the configuration that it defines and wherein said second magnetic pole piece is disposed within said last mentioned aperture and is formed to have a cross sectional dimension such that when located in said aperture there will be a gap between said first and second magnetic pole pieces. ### Claim 5 (depends on 3) A sputtering device according to claim 3 wherein said first magnetic pole piece is formed in a circle like configuration and said second magnetic pole piece is formed as a rod and is located within the circle configuration of said first magnetic pole piece. ### Claim 6 (depends on 3) A sputtering device according to claim 3 wherein said electrical conducting means is formed into a circle like structure having approximately the same diameter as said first pole piece.