# US 4,395,293 A · Accelerated annealing of gallium arsenide solar cells

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- Number: US 4,395,293 A
- Document ID: US4395293A
- Status: Granted
- Kind: A
- Application number: 06/246,360
- Filed: 1981-03-23
- Granted: 1983-07-26
- Earliest claimed: 1981-03-23
- Assignees: Hughes Aircraft Company
- Inventors: Ronald C. Knechtli; Robert Y. Loo; G. Sanjiv Kamath
- Web page: https://patentgrep.com/patent/US4395293A

## CPC

- H10F 71/128: {Annealing}
- H10F 71/1253: {comprising at least three elements, e.g. HgCdTe}
- H10F 77/488: {Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection}
- H10P 95/80: Electrical treatments, e.g. for electroforming
- H10P 95/904: {of Group III-V semiconductors}
- Y02E 10/52: PV systems with concentrators
- Y02E 10/544: Solar cells from Group III-V materials
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- Y10S 136/29: Testing, calibrating, treating, e.g. aging
- Y10S 148/084: Ion implantation of compound devices
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method is provided for accelerating and improving the recovery of GaAs solar cells from the damage which they experience in space under high energy particle irradiation scuh as electrons, protons and neutrons. The method comprises combining thermal annealing with injection annealing. Injection annealing is the recovery from radiation damage resulting from minority carrier injection into the damaged semiconductor, nonradiative minority carrier combination of the injected minority carriers, transfer of the recombination energy to the crystal lattice and utilization of this energy to remove the defects caused by the high energy particle irradiation. The combined annealing of this invention is implemented by heating the solar cells to a moderate temperature (on the order of about 200.degree. C. to 300.degree. C. or less), while at the same time injecting the minority carriers by either of two methods: current injection (by applying an adequate forward bias voltage) or photo-injection (by exposing the cell to adequate light intensity). Sunlight directed onto the solar cells may be employed for heating the solar cells. Alternatively, energy dissipation in the solar cells caused by the flow of a forward bias current may be used to heat the solar cells. In one example, thermal annealing at 200.degree. C. alone was observed to bring the power output up to a level of about 75% of its original value from a level of about 50%, resulting from radiation-induced damage. Combined annealing, employing thermal annealing at 200.degree. C. in conjunction with simultaneous injection of minority carriers at a current density of 125 mA/cm.sup.2, was observed to bring the power output to a level of nearly 90%.

## Claims

### Claim 1

A method of repairing GaAs solar cell damaged by radiation which comprises:
(a) thermally annealing the damaged solar cell by maintaining the solar cell at a temperature substantially above the temperature at which the solar cell operates most efficiently for a predetermined period of time, while substantially simultaneously;
(b) injecting minority carriers into the damaged solar cell at an energy level of the order of circuit potentials.

### Claim 2 (depends on 1)

The method of claim 1 in which minority carriers are injected into the damaged semiconductor by providing an appropriate forward bias current thereto.

### Claim 3 (depends on 2)

The method of claim 2 in which the bias current is provided by a current density of about 20 to 200 mA/cm.sup.2.

### Claim 4 (depends on 2)

The method of claim 2 in which the temperature ranges from about 100.degree. to 300.degree. C.

### Claim 5 (depends on 1)

The method of claim 1 in which minority carriers are injected into the damaged semiconductor by illumination thereof with sunlight.

### Claim 6 (depends on 5)

The method of claim 5 in which the illumination is provided by a concentration ratio of greater than 1.

### Claim 7 (depends on 5)

The method of claim 5 in which the temperature ranges from about 100.degree. to 200.degree. C.