# US 4,394,749 A · Photoelectric device and method of producing the same

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- Number: US 4,394,749 A
- Document ID: US4394749A
- Status: Granted
- Kind: A
- Application number: 06/154,999
- Filed: 1980-05-30
- Granted: 1983-07-19
- Earliest claimed: 1979-06-08
- Assignees: Hitachi, Ltd.
- Inventors: Toshihisa Tsukada; Yukio Takasaki; Tadaaki Hirai; Toru Baji; Hideaki Yamamoto; Yasuo Tanaka; Eiichi Maruyama; Sachio Ishioka
- Web page: https://patentgrep.com/patent/US4394749A

## CPC

- H10F 39/191: {Photoconductor image sensors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.

## Claims

### Claim 1

A photoelectric device comprising:
a solid state imaging device having a semiconductor substrate including a plurality of photoelectric conversion portions; and
scanning means coupled to said substrate for selecting photoelectric conversion portions from said plurality of photoelectric conversion portions,
wherein the photoelectric conversion portions include a photoconductive layer which covers said semiconductor substrate and which lies electrically in contact with at least said scanning means, and a light transmissive electrode which is formed on said photoconductive layer, characterized in that said photoconductive layer is made of an amorphous chalcogenide material whose principal constituent is Se.

### Claim 2 (depends on 1)

A photoelectric device according to claim 1, characterized in that said photoconductive layer made of said amorphous chalcogenide material whose principal constituent is Se has a region doped with Te, in at least a part thereof in a thickness direction thereof.

### Claim 3 (depends on 2)

A photoelectric device according to claim 2, characterized in that said photoconductive layer is formed of at least (a) a first part which contains Se, which is doped with at least one member selected from the group consisting of Te and an element to form deep levels in Se, and in which a quantity of Te and a quantity of the element to form the deep levels in Se are, respectively, at most 10 atomic-% on the average, (b) a second part which contains Se, and in which a peak concentration of a continuous distribution of the element adapted to form the deep levels in Se, the second part being doped with said element, is at least 15 atomic-%, (c) a third part which contains Se, and in which a peak concentration of a continuous distribution of Te, the third part being doped with the Te, is at least 15 atomic-%, and (d) a fourth part which contains Se, which is doped with at least one member selected from the group consisting of Te and the element to form the deep levels in Se, and in which a quantity of Te and that of the element to form the deep levels in Se are, respectively, at most 15 atomic-% on the average, the respective parts being adjacent in succession.

### Claim 4 (depends on 3)

A photoelectric device according to claim 3, characterized in that said element to form the deep level in Se has a concentration gradient within said second part, the concentration being the highest in the vicinity of an interface of said second part with said third part and decreasing smoothly towards the vicinity of an interface thereof with said first part.

### Claim 5 (depends on 2, 3, 4)

A photoelectric device according to any of claims 2, 3 or 4 characterized in that the transparent second electrode is formed on said photoconductive layer through a blocking layer.

### Claim 6 (depends on 1, 2, 3, 4)

A photoelectric device according to any of claims 1, 2, 3 or 4, characterized in that said scanning means includes switching means arrayed in the shape of a matrix on said semiconductor substrate, and that it includes at least a horizontal scanning circuit and a vertical scanning circuit which serve to drive said switching means to take out signals from said photoelectric conversion portions, and a plurality of electrodes which are independent of one another and which are selected by the horizontal and vertical scanning circuits.

### Claim 7 (depends on 1)

A photoelectric device according to claim 1, characterized in that said photoconductive layer includes a lower surface which electrically contacts said scanning means and an upper surface which has been flattened by a heat treatment.

### Claim 8 (depends on 3)

A photoelectric device according to claim 3, wherein said element to form the deep levels is at least one member selected from the group consisting of a Group-Vb element and a Group-IV element and a compound containing one of said elements.