# US 4,394,746 A · Swap gate for ion-implanted contiguous-disk bubble devices

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 4,394,746 A
- Document ID: US4394746A
- Status: Granted
- Kind: A
- Application number: 06/331,481
- Filed: 1981-12-16
- Granted: 1983-07-19
- Earliest claimed: 1981-12-16
- Assignees: International Business Machines Corporation
- Inventors: Richard G. Hirko; Kochan Ju; Ian L. Sanders
- Web page: https://patentgrep.com/patent/US4394746A

## CPC

- G11C 19/0883: {Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders}
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A swap gate for ion-implanted contiguous disk bubble devices using folded minor loops is disclosed. The bubble device has a major loop, a folded minor loop and a swap element positioned between the major loop and the folded end of the minor loop. The swap element has a first portion for interchanging bubbles with the major loop, a second portion for receiving bubbles from a first region of the folded end of the minor loop, and a third portion for transferring bubbles from the first portion to a second region of the folded end of the minor loop. The folded end of the minor loop also has a third region positioned between the first and second regions to form two bubble storage locations. The bubble device has a conductor associated with the major loop and the first portion of the swap element to form a first transfer gate. The device also includes a second conductor associated with the folded minor loop and the second portion of the swap element to form a second transfer gate. The third portion of the swap element combines with the folded minor loop to form a merge element. In a preferred embodiment, the device has a quadruple period major loop which transfers a block of data into a single bit position on each of the minor loops.

## Claims

### Claim 1

A swap gate for ion-implanted contiguous-disk bubble devices comprising
a major loop,
a minor loop having a folded end portion facing said major loop, said end portion having a first region and a second region separated by a third region,
a swap element positioned between said major loop and said minor loop, said swap element having a first portion associated with said major loop, said swap element having a second portion associated with said first region, said swap element having a third portion associated with said second region to form a merge gate, and
conductor means associated with said swap element whereby activation of said conductor means causes the swap function to be effected.

### Claim 2 (depends on 1)

A swap gate as described in claim 1 wherein said major loop has a period of approximately four times the minor loop period.

### Claim 3 (depends on 2)

A swap gate as described in claim 2 wherein said first portion faces and is in spaced relation with said major loop.

### Claim 4 (depends on 2)

A swap gate as described in claim 2 wherein said second portion faces and is in spaced relation with said first region.

### Claim 5 (depends on 2)

A swap gate as described in claim 2 wherein said third portion faces and is in spaced relation with said second region.

### Claim 6

A swap gate for ion-implanted disk bubble devices comprising
a major loop,
a minor loop having a folded end portion facing said major loop, said end portion having a first region and a second region separated by a third region,
a swap element positioned between said major loop and said minor loop, said swap element having a first portion associated with said major loop, said swap element having a second portion associated with said first region, said swap element having a third portion associated with said second region to form a merge gate,
a first conductor associated with said major loop and said first portion to form a first transfer gate, and
a second conductor associated with said second portion and said first region to form a second transfer gate whereby said merge gate combines with said first and second transfer gates to perform the swap function when said conductors are activated.

### Claim 7 (depends on 6)

A swap gate as described in claim 6 wherein said third region combines with said first and second regions to form two bubble storage locations.

### Claim 8 (depends on 6)

A swap gate as described in claim 6 wherein said major loop has a period of approximately twice the minor loop period.

### Claim 9

A swap gate for ion-implanted contiguous-disk bubble devices comprising
a major loop,
a minor loop having a folded end portion facing said major loop, said end portion having a first region and a second region separated by a third region,
a swap element positioned between said major loop and said minor loop, said swap element having a first portion associated with said major loop, said swap element having a second portion associated with said first region, said swap element having a third portion associated with said second region,
a first conductor associated with said major loop and said first portion to form a first transfer gate,
a second conductor associated with said second portion and said first region to form a second transfer gate, and
a third conductor associated with said third portion and said second region to form a merge gate whereby said merge gate combines with said first and second transfer gates to perform the swap function when said conductors are activated.