# US 4,394,699 A · Thin-film magnetic head > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,394,699 A - Document ID: US4394699A - Status: Granted - Kind: A - Application number: 06/236,307 - Filed: 1981-02-20 - Granted: 1983-07-19 - Earliest claimed: 1980-02-21 - Assignees: Matsushita Electric Industrial Co., Ltd. - Inventors: Nobuyuki Kaminaka; Kenji Kanai; Norimoto Nouchi; Noboru Nomura - Web page: https://patentgrep.com/patent/US4394699A ## CPC - G11B 5/3903: {using magnetic thin film layers or their effects, the films being part of integrated structures} - G11B 5/3948: {the sensitive elements being active read-out elements} - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) ## Abstract A thin-film magnetic head employing a magneto-resistive element (MR element), which comprises a substrate, a layer of MR element deposited on said substrate and a conductor layer for supplying said MR element with an electric current in the longitudinal direction thereof. The substrate has at least two crystal axes in the plane parallel to the surface on which said magnetoresistive element is disposed. The respective coefficients of thermal expansion in the directions of said two crystal axes are different from each other. The coefficients of thermal expansion in the directions of said two crystal axes, the orientations of said two crystal axes and the magnetostriction coefficient of the MR element are adjusted in a relationship whereby an internal stress is imparted due to the difference between the temperature during deposition of the MR element and the room temperature, and the thus imparted stress operates to provide the spins within the MR element with a tendency to be oriented in said longitudinal direction of the MR element. ## Claims ### Claim 1 A thin-film magnetic head comprising a substrate, a layer of magnetoresistive element deposited on said substrate at a temperature other than at room termperature and a conductor layer for supplying said magnetoresistive element with an electric current in the longitudinal direction thereof, wherein: said substrate comprises a single crystal material; at least two crystal axes of said substrate material are in parallel with the surface on which said layer of magnetoresistive element is deposited, the coefficient of thermal expansion of the substrate being different in the directions of said crystal axes; the orientations of said crystal axes and the coefficients of thermal expansion in said directions are in the relationship such that an internal stress is set up within said magnetoresistive element in parallel or perpendicular to said longitudinal direction of said element due to the difference between the temperature during the deposition of said element and room temperature; and the magnetostriction coefficient of said element is selected so that said set up stress has the effect of orienting the spins within said element in said longitudinal direction. ### Claim 2 (depends on 1) The thin-film magnetic head as claimed in claim 1, wherein said two crystal axes of the substrate are perpendicular to each other and one of them is parallel to said longitudinal direction of the magnetoresistive element. ### Claim 3 (depends on 2) The thin-film magnetic head as claimed in claim 2, wherein the coefficient of thermal expansion is larger in the direction of said crystal axis parallel to the longitudinal direction of the magnetoresistive element than in the direction of the other crystal axis, and the magnetostriction coefficient of the magnetoresistive element is negative. ### Claim 4 (depends on 2) The thin-film magnetic head as claimed in claim 2, wherein the coefficient of thermal expansion is smaller in the direction of said crystal axis parallel to the longitudinal direction of the magnetoresistive element than in the direction of the other crystal axis, and the magnetostriction coefficient of the magnetoresistive element is positive. ### Claim 5 (depends on 2) The thin-film magnetic head as claimed in claim 2, further comprising a supporting plate for covering the magnetoresistive element, which has a rectangular shape, the longitudinal direction of which is parallel to said longitudinal direction of the magnetoresistive element, wherein the magnetoresistive element has the magnetostriction coefficient such that a deflection of the substrate due to the difference between the coefficients of thermal expansion of the substrate and the supporting plate operates so as to make larger the tendency that the spins within the magnetoresistive element is oriented in said longitudinal direction of the magnetoresistive element. ### Claim 6 (depends on 5) The thin-film magnetic head as claimed in claim 5, wherein the coefficient of thermal expansion of the supporting plate is larger than that of the substrate and the magnetostriction coefficient of the magnetoresistive element is negative. ### Claim 7 (depends on 5) The thin-film magnetic head as claimed in claim 5, wherein the coefficient of thermal expansion of the supporting plate is smaller than that of the siubstrate and the magnetostriction coefficient of the magnetoresistive element is positive. ### Claim 8 (depends on 2) The thin-film magnetic head as claimed in claim 2, wherein said substrate comprises a material selected from the group consisting of a single crystal alumina, Be, Bi, graphite, CdS, Mg, Sb, quartz, TiO.sub.2 (rutile) and Zn. ### Claim 9 (depends on 8) The thin-film magnetic head as claimed in claim 8, wherein said substrate comprises a single crystal alumina and the crystal axis parallel to the C axis is parallel to said longitudinal direction of the magnetoresistive element.