# US 4,394,676 A · Photovoltaic radiation detector element

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 4,394,676 A
- Document ID: US4394676A
- Status: Granted
- Kind: A
- Application number: 06/217,358
- Filed: 1980-12-17
- Granted: 1983-07-19
- Earliest claimed: 1980-12-17
- Inventors: Dimitrios C. Agouridis
- Web page: https://patentgrep.com/patent/US4394676A

## CPC

- H10F 77/206: {for devices having potential barriers}
- H10F 30/29: the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

## Claims

### Claim 1

A photovoltaic radiation detector element comprising:
a body of semiconductor material;
an electrically conductive current collector attached to said body and formed with a plurality of thin branch segments connected at a common point; and
a photovoltaic junction forming coating on said body which closely approaches but is spaced from said current collector branch segments.

### Claim 2 (depends on 1)

The detector element of claim 1 wherein said body is a wafer and said current collector branch segments radiate from the center of one face thereof.

### Claim 3 (depends on 2)

The detector element of claim 2 wherein said current collector includes arm segments disposed normal to branch segments radiating from the center of one face of said wafer.

### Claim 4 (depends on 2)

The detector element of claim 2 wherein said wafer is formed of chlorine-compensated cadmium telluride semiconductor material, said coating is formed of graphite, and said current collector is formed of silver.