# US 4,394,426 A · Photoconductive member with .alpha.-Si(N) barrier layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,394,426 A - Document ID: US4394426A - Status: Granted - Kind: A - Application number: 06/304,568 - Filed: 1981-09-22 - Granted: 1983-07-19 - Earliest claimed: 1980-09-25 - Assignees: Canon Kabushiki Kaisha - Inventors: Isamu Shimizu; Shigeru Shirai; Eiichi Inoue - Web page: https://patentgrep.com/patent/US4394426A ## CPC - G03G 5/08235: {comprising three or four silicon-based layers} - G03G 5/08: characterised by the photoconductive material being inorganic - G03G 5/08221: {comprising one or two silicon based layers} - G03G: ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY ## Abstract A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element. ## Claims ### Claim 1 A photoconductive member comprising: a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and nitrogen atoms as constituents and wherein said intermediate layer is non-photoconductive in the visible light region and is from 30 to 1,000 Angstroms in thickness. ### Claim 2 (depends on 1) A photoconductive member according to claim 1, wherein said amorphous material constituting the intermediate layer contains nitrogen atoms in the range of 43-60 atomic percent based on silicon atoms. ### Claim 3 (depends on 1) A photoconductive member according to claim 1, wherein said amorphous material constituting the intermediate layer further contains hydrogen atoms as a constituent. ### Claim 4 (depends on 3) A photoconductive member according to claim 3, wwherein said amorphous material contains hydrogen atoms in the range of 2-35 atomic percent. ### Claim 5 (depends on 1) A photoconductive member according to claim 1, wherein said amorphous material constituting the intermediate layer contains nitrogen atoms in the range of 25-55 atomic percent and further hydrogen atoms 2-35 atomic percent as a constituent. ### Claim 6 (depends on 1) A photoconductive member according to claim 1, wherein said amorphous material constituting the intermediate layer further contains halogen atoms as a constituent. ### Claim 7 (depends on 6) A photoconductive member according to claim 6, wherein said amorphous material contains halogen atoms in the range of 1-20 atomic percent. ### Claim 8 (depends on 1) A photoconductive member according to claim 1, wherein said amorphous material constituting the intermediate layer further contains hydrogen atoms and halogen atoms as constituents. ### Claim 9 (depends on 8) A photoconductive member according to claim 8, wherein said amorphous material contains halogen atoms in the range of 1-20 atomic percent and hydrogen atoms up to 19 atomic percent. ### Claim 10 (depends on 1) A photoconductive member according to claim 1, wherein said intermediate layer is electrically insulative. ### Claim 11 (depends on 1) A photoconductive member according to claim 1, wherein said photoconductive layer has resistance of at least 5.times.10.sup.9 .omega.cm. ### Claim 12 (depends on 1) A photoconductive member according to claim 1, wherein said photoconductive layer is 1-100 microns in thickness. ### Claim 13 (depends on 1) A photoconductive member according to claim 1, wherein said photoconductive layer contains hydrogen atoms in the range of 1-40 atomic percent. ### Claim 14 (depends on 1) A photoconductive member according to claim 1, wherein said photoconductive layer contains halogen atoms in the range of 1-40 atomic percent. ### Claim 15 (depends on 1) A photoconductive member according to claim 1, wherein said photoconductive layer contains hydrogen atoms and halogen atoms in the range of 1-40 atomic percent in total. ### Claim 16 (depends on 1) A photoconductive member according to claim 1, wherein said photoconductive layer contains n-type impurity. ### Claim 17 (depends on 16) A photoconductive member according to claim 16, wherein said n-type impurity is an element in Group V-A of the periodic table. ### Claim 18 (depends on 17) A photoconductive member according to claim 17, wherein said element in Group V-A of the periodic table is one member selected from N, P, As, Sb and Bi. ### Claim 19 (depends on 16) A photoconductive member according to claim 16, wherein said photoconductive layer contains n-type impurity in the range of 10.sup.-8 -10.sup.-3 atomic ratio to silicon atoms. ### Claim 20 (depends on 1) A photoconductive member according to claim 1, wherein said photoconductive layer contains p-type impurity. ### Claim 21 (depends on 20) A photoconductive member according to claim 20, wherein said p-type impurity is an element in Group III-A of the periodic table. ### Claim 22 (depends on 21) A photoconductive member according to claim 21, wherein said element in Group III-A is one member selected from B, Al, Ga, In and Tl. ### Claim 23 (depends on 20) A photoconductive member according to claim 20, wherein said photoconductive layer contains p-type impurity in the range of 10.sup.-6 -10.sup.-3 atomic ratio. ### Claim 24 (depends on 1) A photoconductive member according to claim 1, wherein an upper layer is provided on the upper surface of said photoconductive layer. ### Claim 25 (depends on 24) A photoconductive member according to claim 24, wherein said upper layer is composed of an amorphous material containing silicon atoms as matrix. ### Claim 26 (depends on 25) A photoconductive member according to claim 25, wherein said amorphous material further contains as constitution element at least one member selected from the group consisting of carbon, oxygen and nitrogen atoms. ### Claim 27 (depends on 25, 26) A photoconductive member according to claim 25 or 26, wherein said amorphous material further contains at least one of hydrogen atoms and halogen atoms as a constituent. ### Claim 28 (depends on 26) A photoconductive member according to claim 26, wherein said amorphous material contains nitrogen atoms in the range of 43-60 atomic percent based on silicon atoms. ### Claim 29 (depends on 25) A photoconductive member according to claim 25, wherein said upper layer contains nitrogen atoms in the range of 25-55 atomic percent and hydrogen atoms in the range of 2-35 atomic percent. ### Claim 30 (depends on 25) A photoconductive member according to claim 25, wherein said upper layer contains nitrogen atoms in the range of 30-60 atomic percent, halogen atoms in the range of 1-20 atomic percent and hydrogen atoms up to 19 atomic percent. ### Claim 31 (depends on 24) A photoconductive member according to claim 24, wherein said upper layer is 30-1000 A in thickness. ### Claim 32 (depends on 24) A photoconductive member according to claim 24, wherein said upper layer is composed of inorganic insulating materials. ### Claim 33 (depends on 24) A photoconductive member according to claim 24, wherein said upper layer is composed of organic insulating materials. ### Claim 34 (depends on 24) A photoconductive member according to claim 24, wherein said upper layer is non-photoconductive with respect to visible rays. ### Claim 35 (depends on 24) A photoconductive member according to claim 24, wherein said upper layer is electrically insulative. ### Claim 36 (depends on 1, 26) A photoconductive member according to claim 1 or 26, wherein said photoconductive member further comprises a surface coating layer of 0.5-70 microns in thickness. ### Claim 37 (depends on 1) A photoconductive member according to claim 1, wherein said intermediate layer contains nitrogen atoms in the range of 30-60 atomic percent, and further halogen atoms in the range of 1-20 atomic percent and hydrogen atoms up to 19 atomic percent. ### Claim 38 (depends on 1) A photoconductive member according to claim 1, wherein halogen atom is one member selected from F, Cl and Br. ### Claim 39 A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing at least one of hydrogen atoms and halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements and wherein said intermediate layer is non-photoconductive in the visible light region and is from 30 to 1,000 Angstroms in thickness. ### Claim 40 (depends on 39) A photoconductive member according to claim 39, wherein said amorphous material constituting the intermediate layer contains nitrogen atoms in the range of 43-60 atomic percent. ### Claim 41 (depends on 39) A photoconductive member according to claim 39, wherein said amorphous material constituting the intermediate layer further contains hydrogen atoms as a constituent. ### Claim 42 (depends on 41) A photoconductive member according to claim 41, wherein said amorphous material contains hydrogen atoms in the range of 2-35 atomic percent. ### Claim 43 (depends on 39) A photoconductive member according to claim 39, wherein said amorphous material constituting the intermediate layer contains nitrogen atoms in the range of 25-55 atomic percent and further hydrogen atoms 2-35 atomic percent as a constituent. ### Claim 44 (depends on 39) A photoconductive member according to claim 39, wherein said amorphous material constituting the intermediate layer further contains halogen atoms as a constituent. ### Claim 45 (depends on 44) A photoconductive member according to claim 44, wherein said amorphous material contains halogen atoms in the range of 1-20 atomic percent. ### Claim 46 (depends on 39) A photoconductive member according to claim 39, wherein said amorphous material constituting the intermediate layer further contains hydrogen atoms and halogen atoms as constituents. ### Claim 47 (depends on 46) A photoconductive member according to claim 46, wherein said amorphous material contains halogen atoms in the range of 1-20 atomic percent and hydrogen atoms up to 19 atomic percent. ### Claim 48 (depends on 39) A photoconductive member according to claim 39, wherein said intermediate layer is electrically insulative. ### Claim 49 (depends on 39) A photoconductive member according to claim 39, wherein said photoconductive layer has resistance of at least 5.times.10.sup.9 .OMEGA.cm. ### Claim 50 (depends on 39) A photoconductive member according to claim 39, wherein said photoconductive layer is 1-100 microns in thickness. ### Claim 51 (depends on 39) A photoconductive member according to claim 39, wherein said photoconductive layer contains hydrogen atoms in the range of 1-40 atomic percent. ### Claim 52 (depends on 39) A photoconductive member according to claim 39, wherein said photoconductive layer contains halogen atoms in the range of 1-40 atomic percent. ### Claim 53 (depends on 39) A photoconductive member according to claim 39, wherein said photoconductive layer contains hydrogen atoms and halogen atoms in the range of 1-40 atomic percent in total. ### Claim 54 (depends on 39) A photoconductive member according to claim 39, wherein said photoconductive layer contains n-type impurity. ### Claim 55 (depends on 54) A photoconductive member according to claim 54, wherein said n-type impurity in an element in Group V-A of the periodic table. ### Claim 56 (depends on 59) A photoconductive member according to claim 59, wherein said element in Group V-A of the periodic table is selected from N, P, As, Sb and Bi. ### Claim 57 (depends on 54) A photoconductive member according to claim 54, wherein said photoconductive layer contains n-type impurity in the range of 10.sup.-8 -10.sup.-3 atomic ratio. ### Claim 58 (depends on 39) A photoconductive member according to claim 39, wherein said photoconductive layer contains p-type impurity. ### Claim 59 (depends on 62) A photoconductive member according to claim 62, wherein said p-type impurity is an element in Group III-A of the periodic table. ### Claim 60 (depends on 59) A photoconductive member according to claim 59, wherein said element in Group III-A is one member selected from B, Al, Ga, In and Tl. ### Claim 61 (depends on 58) A photoconductive member according to claim 58, wherein said photoconductive layer contains p-type impurity in the range of 10.sup.-6 -10.sup.-3 atomic ratio. ### Claim 62 (depends on 39) A photoconductive member according to claim 39, wherein an upper layer is provided on the upper surface of said photoconductive layer. ### Claim 63 (depends on 62) A photoconductive member according to claim 62, wherein said upper layer is composed of an amorphous material containing silicon atoms as matrix. ### Claim 64 (depends on 63) A photoconductive member according to claim 63, wherein said amorphous material further contains at least one element selected from the group consisting of carbon, oxygen and nitrogen atoms as a constituent. ### Claim 65 (depends on 63, 64) A photoconductive member according to claim 63 or 64, wherein said amorphous material further contains at least one of hydrogen atoms and halogen atoms as a constituent. ### Claim 66 (depends on 64) A photoconductive member according to claim 64, wherein said amorphous material contains nitrogen atoms in the range of 43-60 atomic percent based on silicon atoms. ### Claim 67 (depends on 63) A photoconductive member according to claim 63, wherein said upper layer contains nitrogen atoms in the range of 25-55 atomic percent and hydrogen atoms in the range of 2-35 atomic percent. ### Claim 68 (depends on 63) A photoconductive member according to claim 63, wherein said upper layer contains nitrogen atoms in the range of 30-60 atomic percent, halogen atoms in the range of 1-20 atomic percent and hydrogen atoms up to 19 atomic percent based on silicon atoms. ### Claim 69 (depends on 62) A photoconductive member according to claim 62, wherein said upper layer is 30-1000 A in thickness. ### Claim 70 (depends on 62) A photoconductive member according to claim 62, wherein said upper layer is composed of inorganic insulating materials. ### Claim 71 (depends on 62) A photoconductive member according to claim 62, wherein said upper layer is composed of organic insulating materials. ### Claim 72 (depends on 62) A photoconductive member according to claim 62, wherein said upper layer is non-photoconductive with respect to visible rays. ### Claim 73 (depends on 62) A photoconductive member according to claim 62, wherein said upper layer is electrically insulative. ### Claim 74 (depends on 39, 62) A photoconductive member according to claim 39 or 62, wherein said photoconductive member further comprises a surface coating layer of 0.5-70 microns in thickness. ### Claim 75 (depends on 39) A photoconductive member according to claim 39, wherein said intermediate layer contains nitrogen atoms in the range of 30-60 atomic percent, and further halogen atoms in the range of 1-20 atomic percent and hydrogen atoms up to 19 atomic percent. ### Claim 76 A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and a non-photoconductive layer in the visible light region constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements in contact with said photoconductive layer, wherein the non-photoconductive layer is from 30 to 1,000 Angstroms in thickness. ### Claim 77 (depends on 76) A photoconductive member according to claim 76, wherein the amount of nitrogen atoms in said amorphous material of the non-photoconductive layer ranges from 43-60 atomic percent. ### Claim 78 (depends on 76) A photoconductive member according to claim 76, wherein said amorphous material of the non-photoconductive layer contains hydrogen atoms as a constituent. ### Claim 79 (depends on 78) A photoconductive member according to claim 78, wherein said hydrogen atoms are present in the range of 2-35 atomic percent. ### Claim 80 (depends on 76) A photoconductive member according to claim 76, wherein said amorphous material of the non-photoconductive layer contains nitrogen atoms in the range of 25-55 atomic percent and hydrogen atoms in the range of 2-35 atomic percent. ### Claim 81 (depends on 76) A photoconductive member according to claim 76, wherein said amorphous material of the non-photoconductive layer containing nitrogen atoms further contains halogen atoms as a constituent. ### Claim 82 (depends on 81) A photoconductive member according to claim 81, wherein said halogen atoms are present in the range of 1-20 atomic percent. ### Claim 83 (depends on 76) A photoconductive member according to claim 76, wherein said amorphous material of the non-photoconductive layer further contains hydrogen atoms and halogen atoms as constituents. ### Claim 84 (depends on 83) A photoconductive member according to claim 83, wherein said halogen atoms are present in the range of 1-20 atomic percent and said hydrogen atoms are present up to 19 atomic percent. ### Claim 85 (depends on 76) A photoconductive member according to claim 76, wherein said non-photoconductive layer is electrically insulative. ### Claim 86 (depends on 76) A photoconductive member according to claim 76, wherein said photoconductive layer has resistance of at least 5.times.10.sup.9 ohm cm. ### Claim 87 (depends on 76) A photoconductive member according to claim 76, wherein said photoconductive layer is 1-100 microns in thickness. ### Claim 88 (depends on 76) A photoconductive member according to claim 76, wherein said photoconductive layer contains hydrogen atoms in the range of 1-40 atomic percent. ### Claim 89 (depends on 76) A photoconductive member according to claim 76, wherein said photoconductive layer contains halogen atoms in the range of 1-40 atomic percent. ### Claim 90 (depends on 76) A photoconductive member according to claim 76, wherein said photoconductive layer contains hydrogen atoms and halogen atoms in the range of 1-40 atomic percent in total. ### Claim 91 (depends on 76) A photoconductive member according to claim 76, wherein said photoconductive layer contains N-type impurity. ### Claim 92 (depends on 91) A photoconductive member according to claim 91, wherein said N-type impurity is an element in Group V A of the Periodic Table. ### Claim 93 (depends on 92) A photoconductive member according to claim 92, wherein said element in Group V A of the Periodic Table is selected from N, P, As, Sb and Bi. ### Claim 94 (depends on 91) A photoconductive member according to claim 91, wherein said photoconductive layer contains N-type impurity in the range of 10.sup.-8 to 10.sup.-3 atomic ratio. ### Claim 95 (depends on 76) A photoconductive member according to claim 76, wherein said photoconductive layer contains P-type impurity. ### Claim 96 (depends on 95) A photoconductive member according to claim 95, wherein said P-type impurity is an element in Group III A of the Periodic Table. ### Claim 97 (depends on 96) A photoconductive member according to claim 96, wherein said element in Group III A is selected from B, Al, Ga, In and Tl. ### Claim 98 (depends on 95) A photoconductive member according to claim 95, wherein said photoconductive layer contains P-type impurity in the range of 10.sup.-6 to 10.sup.-3 atomic ratio.