# US 4,394,401 A · Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film

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- Number: US 4,394,401 A
- Document ID: US4394401A
- Status: Granted
- Kind: A
- Application number: 06/290,978
- Filed: 1981-08-07
- Granted: 1983-07-19
- Earliest claimed: 1980-08-08
- Assignees: Fujitsu Limited
- Inventors: Yoshimi Shioya; Mamoru Maeda; Kanetake Takasaki; Mikio Takagi
- Web page: https://patentgrep.com/patent/US4394401A

## CPC

- H10P 14/6923: {the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}
- C23C 16/401: {containing silicon}
- C23C 16/5096: {Flat-bed apparatus}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.

## Claims

### Claim 1

A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate comprising the step of exposing the substrate to a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3, said deposition being effected under conditions such that the reaction gas mixture has a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) which is greater than or equal to 50 and a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) which is less than or equal to 0.08.

### Claim 2 (depends on 1)

A method as claimed in claim 1, wherein the exposing step is effected at a pressure of from 0.1 to 2 Torr and at a temperature of from 20.degree. to 450.degree. C.

### Claim 3 (depends on 1)

A method as claimed in claim 1, wherein the exposing step is effected by using a radio-frequency power of from 50 KHz to 2.45 GHz.

### Claim 4 (depends on 1)

A method as claimed in claim 1, wherein the mol ratio of N.sub.2 O to SiH.sub.4 in the reaction gas mixture is from 50 to 100.

### Claim 5 (depends on 1)

A method as claimed in claim 1, wherein the mol ratio of PH.sub.3 to SiH.sub.4 in the reaction gas mixture is from 0.03 to 0.06.

### Claim 6

A method of depositing a phosphosilicate glass film on a substrate, comprising the steps of:
(a) placing the substrate within a chamber;
(b) evacuating the chamber;
(c) heating the atmosphere in the chamber;
(d) introducing a reaction gas mixture of SiH.sub.4, N.sub.2 O, and PH.sub.3 into the chamber, the mol ratio of N.sub.2 O to SiH.sub.4 being greater than or equal to 50 and the mol ratio of PH.sub.3 to SiH.sub.4 being less than or equal to 0.08; and
(e) applying radio-frequency power to the reaction gas mixture so that the phosphosilicate glass film is deposited on the substrate.

### Claim 7 (depends on 6)

A method as claimed in claim 6, wherein said evacuating step (b) includes maintaining the atmosphere in the chamber at a pressure of from 0.1 to 2 Torr.

### Claim 8 (depends on 7)

A method as claimed in claim 7, wherein the step (e) includes applying a radio-frequency power of from 50 KHz to 2.45 GHz.

### Claim 9 (depends on 8)

A method as claimed in claim 8, wherein said heating step (c) comprises heating the atmosphere to a temperature of from 20.degree. to 450.degree. C.

### Claim 10 (depends on 9)

A method as claimed in claim 9, wherein the mol ratio of N.sub.2 O to SiH.sub.4 in the reaction gas mixture is from 50 to 100 and wherein the mol ratio of PH.sub.3 to SiH.sub.4 in the reaction gas mixture is from 0.03 to 0.06.