# US 4,394,191 A · Stacked polycrystalline silicon film of high and low conductivity layers

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- Number: US 4,394,191 A
- Document ID: US4394191A
- Status: Granted
- Kind: A
- Application number: 06/217,224
- Filed: 1980-12-17
- Granted: 1983-07-19
- Earliest claimed: 1979-12-17
- Assignees: Hitachi, Ltd.
- Inventors: Yasuo Wada; Hiroo Usui; Makoto Ohkura; Masanobu Miyao; Masao Tamura; Takashi Tokuyama
- Web page: https://patentgrep.com/patent/US4394191A

## CPC

- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10D 62/40: Crystalline structures
- H10D 62/60: Impurity distributions or concentrations
- Y10S 438/934: Sheet resistance, i.e. dopant parameters
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed. Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.

## Claims

### Claim 1

A polycrystalline silicon film comprising a second layer and a first layer formed on the second layer, the second layer being formed by impurity doping and thermal annealing prior to forming the first layer, said second layer having an activated impurity concentration that is not higher than a solid solubility, and the first layer being formed on said second layer and having an activated impurity concentration that is higher than the solid solubility, whereby a polycrystalline film having a low resistivity is formed.

### Claim 2 (depends on 1)

A polycrystalline silicon film according to claim 1, wherein thicknesses of said polycrystalline silicon film and said first layer are approximately 0.3-0.5 .mu.m and approximately 0.2 .mu.m, respectively.

### Claim 3 (depends on 1, 2)

A polycrystalline silicon film according to claim 1 or 2, wherein resistivities of said first layer and said second layer are approximately 2.5.times.10.sup.-4 .OMEGA..multidot.cm and approximately 4.times.10.sup.-4 -6.times.10.sup.-4 .OMEGA..multidot.cm, respectively.

### Claim 4 (depends on 1, 2, 3)

A polycrystalline silicon film according to claim 1, 2 or 3, wherein an impurity of said film is an element selected from the group consisting of phosphorus, arsenic and boron.

### Claim 5 (depends on 1)

A polycrystalline silicon film according to claim 1, formed by doping an impurity into a polycrystalline silicon film, thermally annealing the polycrystalline silicon film, to form said layer having said activated impurity concentration not higher than a solid solubility, and then irradiating the resultant polycrystalline film with a laser beam to form said first layer on said second layer.

### Claim 6 (depends on 1)

A polycrystalline silicon film according to claim 1, formed, after implanting the impurity, by a step of thermal annealing the polycrystalline silicon film to increase the grain size of the crystals of the first layer, so that a high mobility and a high activated impurity concentration are achieved in the polycrystalline silicon film at the same time.

### Claim 7 (depends on 5)

A polycrystalline silicon film according to claim 5, wherein the grain size of the crystals of the first layer increases after the thermal annealing.

### Claim 8 (depends on 5, 7)

A polycrystalline silicon film according to claim 5 or 7, wherein the activated impurity concentration of said first layer increases after said irradiating with a laser beam.

### Claim 9 (depends on 5)

A polycrystalline silicon film according to claim 5, formed, after said thermally annealing but before said irradiating, by a second implanting of an impurity, into the surface region of the polycrystalline silicon film.

### Claim 10

A polycrystalline silicon film comprising a second layer whose activated impurity concentration is not higher than a solid solubility but whose activated impurity concentration is formed by impurity doping and thermally annealing the second layer to form an activated impurity concentration nearly equal said solid solubility, and a first layer which is formed on said second layer and whose activated impurity concentration is higher than the solid solubility, whereby a polycrystalline film having a low resistivity is formed.