Method of forming high resistivity regions in GaAs by deuteron implantation
AssigneeUnited Kingdom Atomic Energy Authority
InventorsGeoffrey Dearnaley, Kenneth Steeples, Ian J. Saunders
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Abstract
A process for producing regions of high resistivity in gallium arsenide, and other related compounds and mixed crystals which show electrical behavior which is similar to that of gallium arsenide, in which deuterons are implanted into a substrate made of the semi-conductor body with energies up to a maximum value corresponding to a desired depth of penetration into the body. Apparatus for carrying out the process also is described.
Claims9
A process for producing a semi-conductor device having regions of high resistivity in a semi-conductor substrate body comprising gallium arsenide or other related compounds and mixed crystals which show similar electrical behavior to gallium arsenide, comprising the sole operation of implanting deuterons only into the said regions of the substrate body with energies only up to a maximum value corresponding to a desired depth of penetration into the substrate body.
Dependencies are inferred from the claim text.