# US 4,393,806 A · Boat for the epitaxial growth from the liquid phase

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- Number: US 4,393,806 A
- Document ID: US4393806A
- Status: Granted
- Kind: A
- Application number: 06/237,816
- Filed: 1981-02-25
- Granted: 1983-07-19
- Earliest claimed: 1980-02-27
- Assignees: U.S. Philips Corporation
- Inventors: Marc Mahieu; Philippe Vandenberg; Jacques J. Varon
- Web page: https://patentgrep.com/patent/US4393806A

## CPC

- C30B 19/063: {Sliding boat system}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A boat for use in the epitaxial crystal growth of two layers on multiple substrates includes a structure where the substrates are located in a cavity in a support layer of the crucible structure, and a slide layer having two reservoirs is provided thereover. The two reservoirs contain the respective liquid solution for the two epitaxial layers to be provided, and the two reservoirs are respectively provided with the slide layer being the bottom layer of one reservoir and a removable sealing element being the bottom layer of the other reservoir. Upon moving the slide layer over the bottom supporting layer, the multiple substrates in the cavity are provided with liquid solutions to obtain epitaxial growth.

## Claims

### Claim 1

A boat for use in a device for liquid phase epitaxial growth of two successive semiconductor layers on a plurality of semiconductor substrates, said boat comprising
a crucible structure,
a bottom support layer of said crucible structure having a cavity for holding said substrates,
a slide layer positioned above said support layer and extending for linear movement through opposite end walls of said crucible structure,
two reservoirs for liquid solutions provided on said slide layer, one of said two reservoirs having said support layer as a bottom, and
a removable sealing element provided in said slide layer to act as a bottom for the other of said two reservoirs.

### Claim 2 (depends on 1)

A boat according to claim 1, wherein said cavity of said support layer is provided centrally in said crucible structure, and wherein said two reservoirs are adjacently located to one another near either of said opposite end walls.

### Claim 3 (depends on 1)

A boat according to claim 1, wherein said crucible structure is generally rectangular with said slide layer moving in the direction of the long dimension, and wherein said sealing element and said cavity extend in the width direction of said rectangular crucible structure with said sealing element having a larger dimension in the width direction than said cavity.

### Claim 4 (depends on 1)

A boat according to claim 1, wherein said slide layer bears on said support layer so that said cavity is covered during epitaxial crystal growth.

### Claim 5 (depends on 1, 2, 3, 4)

A boat according to one of claims 1, 2, 3 or 4 wherein said support layer includes an opening near one of said opposite end walls for holding said sealing element, said sealing element acting in a sealing position in said slide layer near the other of said opposite end walls.