# US 4,393,130 A · System for encapsulation of semiconductor chips

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 4,393,130 A
- Document ID: US4393130A
- Status: Granted
- Kind: A
- Application number: 06/338,732
- Filed: 1982-01-11
- Granted: 1983-07-12
- Earliest claimed: 1982-01-11
- Assignees: Critikon, Inc.
- Inventors: Nelson Ho; Jiri Kratochvil
- Web page: https://patentgrep.com/patent/US4393130A

## CPC

- G01N 27/414: Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G03F 7/00: Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A system for encapsulating semiconductor chips, such as chips carrying chemical sensitive field-effect devices, includes lamination of a sheet of dry film photoresist material onto the surface of the chip, placement of a photomask over the chip in a predetermined alignment, and then exposure of the photomask to light so that light passes through certain light-transmitting portions of the mask onto the chip. The photoresist material is then developed to remove the material from over the gate regions of each of the field-effect devices to define windows in the material through which the gate regions are exposed. Chemical sensitive membrane systems may then be applied to the windows of the devices to cover the gate regions.

## Claims

### Claim 1

A method of encapsulating at least a portion of a semiconductor wafer having a plurality of regions which are to be exposed through the encapsulant, said method comprising the steps of
laminating one or more sheets of dry film photoresist material onto a surface of the wafer,
aligning a photomask with the wafer so that a predetermined light-transmitting pattern of the mask coincides with certain areas of the wafer surface,
directing light onto the photomask and through the light-transmitting pattern of the mask onto the wafer, and
developing the photoresist material to remove the material from over said regions of the wafer to define windows in the material through which the regions are exposed,
wherein the semiconductor wafer includes a plurality of field-effect transistor devices, each of which includes a gate region corresponding to a different one of the regions to be exposed through the encapsulant, said method further comprising the step of applying a chemical sensitive membrane system into each of the windows defined in the photoresist material to adhere to the sides of the windows and cover the corresponding exposed regions.

### Claim 2 (depends on 1)

A method as in claim 1 wherein said laminating step includes
placing the sheet of dry film photoresist material over the wafer, and
passing the wafer and sheet of material through a pair of heated rollers so that the sheet is heated and pressed against the wafer.

### Claim 3 (depends on 1)

A method as in claim 1 wherein said applying step comprises inserting the membrane systems into the windows by micro injection, and then curing the membrane systems in place.

### Claim 4

A method of encapsulating semiconductor devices formed in a silicon wafer where each device includes a region which is to be exposed through the encapsulant, said method comprising the steps of
laminating a sheet of dry film photoresist material onto a surface of the wafer,
aligning a photomask with the wafer so that a preselected light-transmitting pattern of the mask is arranged in a certain predetermined relationship with respect to said regions,
exposing the photomask to light so that the light passes through the light-transmitting pattern of the mask onto the wafer,
washing the photoresist material with a developing solution to remove all materail from the wafer except for pillars of material located over said regions,
applying an encapsulant to the surface of the wafer to cover all areas except those covered by the pillars of material, and
washing the wafer with an etchant to remove the pillars of photoresist material to expose said regions.

### Claim 5 (depends on 4)

A method as in claim 4 wherein said encapsulant applying step comprises
dicing the wafer to obtain the individual and separate semiconductor devices, and
electrically bonding the devices, and
applying an encapsulant to cover areas of each device except that covered by the respective pillar of material.