# US 4,392,721 A · Electrochromic cell having a mixed solid ion-conducting layer

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- Number: US 4,392,721 A
- Document ID: US4392721A
- Status: Granted
- Kind: A
- Application number: 06/235,871
- Filed: 1981-02-19
- Granted: 1983-07-12
- Earliest claimed: 1981-02-19
- Assignees: American Cyanamid Company
- Inventors: Robert D. Giglia; Gottfried Haacke
- Web page: https://patentgrep.com/patent/US4392721A

## CPC

- G02F 1/1525: {characterised by a particular ion transporting layer, e.g. electrolyte}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

An electrochromic device comprises a layer of electrochromic tungsten oxide in contact with an ion-conductive insulating layer of codeposited mixture of SiO and Cr.sub.2 O.sub.3 between electrodes of reversible polarity for alternately coloring and erasing the electrochromic layer by alternate application of current in opposite directions. The mixture of components in the ion-conductive layer improves cycling life of the device.

## Claims

### Claim 1

An electrochromic device comprising a layer of inorganic electrochromic material having one of its surfaces in ion-conductive contact with a surface of a single ion-conductive insulating layer which consists essentially of a codeposited mixture of SiO and Cr.sub.2 O.sub.3, with those two layers disposed between two electrode surfaces with means for passing electric current in reversible directions through the two layers for alternate coloration and erasing of the electrochromic layer wherein the ratio of Cr.sub.2 O.sub.3 to SiO in said codeposited mixture is the equivalent of a ratio in the range from 2.5 to 50 m.mu. film thickness of Cr.sub.2 O.sub.3 to 160 m.mu. film thickness of SiO.

### Claim 2 (depends on 1)

A electrochromic device defined by claim 1 werein the electrochromic material is electrochromic tungsten oxide.

### Claim 3 (depends on 1)

A device defined by claim 1 wherein the amount of SiO in the layer is equivalent to about 160 m.mu. film thickness of SiO and the amount of Cr.sub.2 O.sub.3 in the same layer is equivalent to about 2.5 to 5 m.mu. film thickness of Cr.sub.2 O.sub.3.