# US 4,392,452 A · Evaporation device

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- Number: US 4,392,452 A
- Document ID: US4392452A
- Status: Granted
- Kind: A
- Application number: 06/372,389
- Filed: 1982-04-27
- Granted: 1983-07-12
- Earliest claimed: 1979-12-26
- Assignees: Nippon Hoso Kyokai
- Inventors: Kazuhisa Taketoshi; Chihaya Ogusu
- Web page: https://patentgrep.com/patent/US4392452A

## CPC

- C23C 14/0021: {Reactive sputtering or evaporation}
- H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00)
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3228: {Sulfides}
- H10P 14/3231: {Selenides}
- H10P 14/3232: {Tellurides}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p.sup.+ or n.sup.+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.

## Claims

### Claim 1

An apparatus wherein a film consisting of a compound presenting a semiconductor characteristics or a solid solution thereof is deposited on a substrate in an atmosphere of an atomic state gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas with a partial pressure of 1.times.10.sup.-3 Torr or less said apparatus comprising:
a vacuum container having a gas introduction path for introducing a gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas to said vacuum container and a gas exhaust path connected to a gas exhausting equipment for controlling a gas pressure and a vacuum condition in said vacuum container,
a discharging means disposed in said vacuum container and having a cathode with a heating power source and an anode to which a voltage is applied with respect to said cathode for producing said atomic state gas by activating said gas by a discharge between said cathode and said anode,
an evaporation source disposed in said vacuum container for accommodating evaporation material and having an evaporation heater for heating said evaporation material,
a hot wall disposed in said vacuum container and having a hollow cylindrical body having a lower end opening for receiving a vapor evaporated from said evaporation source, an upper end opening being opposite to said lower end opening in a direction apart from said evaporation source, and an inner surface at least on which a resistive film is deposited so that the resistive film is heated by an electric power supplied across both ends of said resistive film, and
a substrate mounting member for mounting said substrate on said upper end opening of said hot wall on which said vapor evaporated from said evaporation source is deposited.

### Claim 2 (depends on 1)

The apparatus as claimed in claim 1, wherein said anode and said cathode are arranged in a manner that an electron beam emitted by said discharging means is prevented from contacting said vapor evaporated from said evaporation source.

### Claim 3 (depends on 1)

The apparatus an evaporation as claimed in claim 1, wherein said discharging means has a shielding plate for shielding an electron beam emitted by said discharging means so as to prevent said electron beam from contacting said vapor evaporated from said evaporation source.

### Claim 4 (depends on 1)

The apparatus an evaporation as claimed in claim 1, wherein said hot wall has a first cylinder made of glass or ceramic and second cylinders connected to both edges of said first cylinder, respectively and each having a diameter which is smaller than a diameter of said first cylinder, a base holder being provided on one end of said second cylinder so as to hold an evaporation substrate, a resistive film being deposited on the outer surfaces of said first and second cylinders, and lead wires being wound respectively around said second cylinders, so that a current flows through said lead wires to heat said resistive film, whereby a temperature gradient being produced inside said first and second cylinders in accordance with the difference of diameters between said first and second cylinders.

### Claim 5 (depends on 1)

The apparatus an evaporation as claimed in claim 1, wherein a resistive film is deposited on said inner surfaces of said first and second cylinders so as to prevent an electrification of said inner surfaces of said first and second cylinders.

### Claim 6 (depends on 1)

The apparatus an evaporation as claimed in claim 1, wherein an oil diffusion pump is provided in said gas exhaust path, and in a downstream of said oil diffusion pump there is provided an exhaust equipment having an exhaust box in which an oil rotary pump is accommodated, and small holes are provided in a lower part of said exhaust box, to an upper end of which is connected an exhausting duct, another end of which is immersed in a caustic soda solution filled in a purifying bottle, which is sucked by a ventilator through a second duct, so that toxic gases exhausted from said oil rotary pump are absorbed by said caustic soda solution.

### Claim 7 (depends on 1)

The apparatus an evaporation as claimed in claim 1, wherein, said anode is formed of aluminium, a distance between said anode and said cathode of said discharging means is determined in a range from 10 cm to 30 cm, a d.c. voltage in a range from 500 V to 3,000 V is applied to said anode and a discharge current in a range from 0.01 mA to 1 mA is conducted for a time duration in a range from 5 minutes to 30 minutes under a partial pressure of the introduced gas of 1 Torr or less.

### Claim 8 (depends on 4)

The apparatus an evaporation as claimed in claim 4, wherein an inner diameter of each of said second cylinders is longer by an amount in a range from 10% to 80% than an inner diameter of said first cylinder, said resistive film consists of a graphite film having a thickness in a range from 0.05 mm to 0.5 mm and a resistivity in a range from 100.OMEGA. to 1 k.OMEGA., and said evaporation substrate consists of a glass substrate such is heated at a temperature in a range from 200.degree. C. to 600.degree. C. by supplying an electric power to said lead wires, so that a temperature at a side wall of said first cylinder becomes higher by a temperature in a range from 10.degree. C. to 20.degree. C. than a temperature at said glass substrate.

### Claim 9 (depends on 6)

The apparatus an evaporation as claimed in claim 6, wherein a valve member is provided in said gas exhaust path between said vacuum container and said oil diffusion pump and is controlled in such a way that an exhausting speed in said gas exhaust path is lowered during the evaporation deposition to prevent said active gas from being exhausted from said oil diffusion pump.

### Claim 10 (depends on 9)

The apparatus an evaporation as claimed in claim 9, wherein a degree of vacuum in said gas exhaust path between said oil diffusion pump and said oil rotary pump is set at a pressure in a range from 0.01 Torr to 0.05 Torr during the evaporation deposition.