# US 4,392,299 A · Method of manufacturing low resistance gates and interconnections

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- Number: US 4,392,299 A
- Document ID: US4392299A
- Status: Granted
- Kind: A
- Application number: 06/223,493
- Filed: 1981-01-08
- Granted: 1983-07-12
- Earliest claimed: 1981-01-08
- Assignees: RCA Corporation
- Inventors: Joseph M. Shaw
- Web page: https://patentgrep.com/patent/US4392299A

## CPC

- H10D 64/01312: {the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of forming low resistance silicided gates or interconnects is described wherein a refractory metal and silicon is simultaneously co-deposited to form a composite layer which is thereafter heat treated in a non-oxidizing atmosphere to form the polycrystalline state of the silicide.

## Claims

### Claim 1

A process for forming a low resistance refractory metal silicide on a substrate comprising the steps of:
positioning the substrate in a reaction chamber maintained at a first temperature;
depositing, in a single low pressure chemical vapor deposition step, a composite of a refractory metal and silicon on the substrate by simultaneously passing a gaseous mixture of both a refractory metal carbonyl and silane gas through the chamber and over the substrate; and
heating the composite in a non-oxidizing atmosphere to a second temperature, higher than the first temperature, to form the silicide of the metal.

### Claim 2 (depends on 1)

The process of claim 1, wherein:
the refractory metal is derived from the metal carbonyl selected from the group consisting of molybdenum and tungsten; and
the silicon is derived from a mixture of silane and a carrier gas.

### Claim 3 (depends on 2)

The process of claim 2, wherein the step of depositing a composite of the refractory metal and silicon comprises:
maintaining the gaseous mixture of the refractory metal carbonyl in a carrier gas at a pressure of about 1 mm;
maintaining the silane gas at a pressure of about 5 mm, and
the substrate and the gases are maintained at the first temperature which ranges from about 500.degree. C. to about 600.degree. C. for a period of about 5 minutes.

### Claim 4 (depends on 3)

The process of claim 3, wherein the step of heating the composite to the second temperature comprises the steps of:
annealing the composite at a temperature ranging from about 900.degree. C. to about 1000.degree. C. in a hydrogen atmosphere; and
maintaining the composite at the annealing temperature, in the hydrogen atmosphere, for a period of about 30 minutes.