# US 4,391,743 A · Composition for depositing metallic oxide film coatings

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- Number: US 4,391,743 A
- Document ID: US4391743A
- Status: Granted
- Kind: A
- Application number: 06/325,648
- Filed: 1981-11-30
- Granted: 1983-07-05
- Earliest claimed: 1981-11-30
- Assignees: Nippon Soda Co., Ltd.
- Inventors: Umio Maeda; Hirofumi Shoji; Yasusuke Wada; Yoshio Horie
- Web page: https://patentgrep.com/patent/US4391743A

## CPC

- H01B 1/08: oxides
- C03C 17/25: by deposition from the liquid phase
- C03C 17/27: by oxidation of a coating previously applied
- C23C 18/1216: {Metal oxides (C23C18/1212 takes precedence)}
- C23C 18/1245: {Inorganic substrates other than metallic}
- C03C 2217/231: In2O3/SnO2
- C03C 2218/111: by dipping, immersion
- C03C 2218/322: Oxidation
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

An organic solution of a composition consisting essentially of 100 parts of an indium compound represented by the formula In(X).sub.l (Y).sub.m wherein X denotes a chelate ring formed by .beta.-diketones, esters of .beta.-ketoacids or the like, Y denotes an alkoxide formed by aliphatic alcohols or the like, and l and m denote an integer which is either 1 or 2 having the relationship of l+m=3, and from 5 to 20 parts of a tin compound represented by the formula Sn(X').sub.2 or Sn(Y')m' wherein X' denotes a chelate ring formed by .beta.-diketones or esters of .beta.-ketoacids, Y' denotes an alkoxide formed by aliphatic alcohols, and m' denotes 2 or 4, is suitable for deposition of transparent, hardened and low resistivity film coatings of tin-doped indium oxide on a substrate by dipcoating.

## Claims

### Claim 1

A composition to be dissolved in an organic solvent and applied onto a substrate to deposit a metallic oxide film coating on the substrate, said composition consisting essentially of 100 parts of an indium compound represented by the formula
In(X).sub.l (Y).sub.m
wherein, for said indium compound X denotes a chelate ring material selected from the group consisting of acetylacetone, methyl or ethyl ester of acetoacetic acid, lactic acid, triethanolamine, and mixtures thereof; Y denotes an alkoxide material selected from the group consisting of butyl alcohol, octyl alcohol, octylene glycol, mono-methylether of ethylene glycol, and mixtures thereof; l and m are an integer which is 1 or 2 having the relationship of l+m=3; said indium compound being one component of the composition, the other component being from 5 to 20 parts of a tin compound represented by the formula
Sn(X').sub.2 or Sn(Y').sub.m'
wherein, for said tin compound X' denotes a chelate ring material selected from the group consisting of acetylacetone, methyl acetoacetoate, and mixtures thereof; Y' denotes an alkoxide material selected from the group consisting of butyl alcohol, oxtyl alcohol, and mixtures thereof; and m' is an integer which is 2 or 4.