# US 4,391,658 A · Method for manufacturing semiconductor substrate

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- Number: US 4,391,658 A
- Document ID: US4391658A
- Status: Granted
- Kind: A
- Application number: 06/329,060
- Filed: 1981-12-09
- Granted: 1983-07-05
- Earliest claimed: 1980-12-12
- Assignees: Tokyo Shibaura Denki Kabushiki Kaisha
- Inventors: Syoiti Kitane; Shigeru Honjo; Kuniyoshi Ohe; Fumio Tobioka
- Web page: https://patentgrep.com/patent/US4391658A

## CPC

- H10P 32/171: {being group IV material}
- H10P 32/1404: {using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for manufacturing a semiconductor substrate comprising the steps of forming on all surfaces of a raw semiconductor substrate an impurity layer of the same conductivity type as the raw semiconductor substrate and forming a first insulating film on the entire impurity layer, removing those portions of the impurity layer and first insulating film which are formed on one major surface of the raw semiconductor substrate and finishing the exposed major surface of the raw semiconductor substrate, thus providing a mirror surface, forming a second insulating film on the mirror surface of the raw semiconductor substrate and on the remaining first insulating film, forming a protective film on the entire second insulating film and forming a third insulating film on the entire protective film, thus providing a laminate, holding the laminate side by side together with other laminates provided in the same way, heating the laminates thus held, in an oxidizing atmosphere, thereby diffusing the impurity from the impurity layers into the raw semiconductor substrates to form diffusion layers in the raw semiconductor substrates, and removing the first insulating film, second insulating film, protective film and third insulating film from each of the laminates. According to the invention, a high precision and high quality product semiconductor substrate can be inexpensively provided.

## Claims

### Claim 1

A method for manufacturing a semiconductor substrate comprising the steps of:
forming on all surfaces of a raw semiconductor substrate an impurity layer of the same conductivity type as the raw semiconductor substrate and forming a first insulating film on the entire impurity layer;
removing those portions of the impurity layer and first insulating film which are formed on one major surface of the raw semiconductor substrate and finishing the exposed major surface of the raw semiconductor substrate, thus providing a mirror surface;
forming a second insulating film on the mirror surface of the raw semiconductor substrate and on the remaining first insulating film, forming a protective film on the entire second insulating film and forming a third insulating film on the entire protective film, thus providing a laminate;
holding the laminate side by side together with other laminates provided in the same way;
heating the laminates thus held, in an oxidizing atmosphere, thereby diffusing the impurity from the impurity layers into the raw semiconductor substrates to form diffusion layers in the raw semiconductor substrates; and
removing the first insulating film, second insulating film, protective film and third insulating film from each of the laminates.

### Claim 2 (depends on 1)

The method of claim 1, wherein said first and second insulating films consist of silicon oxide, said protective film consists of polycrystalline silicon, and said third insulating film consists of silicon nitride.

### Claim 3 (depends on 2)

The method of claim 2, wherein said step of removing said first, second and third insulating films and protective film from said thermally treated laminate is carried out by immersing said laminate in a mixed liquid consisting of a surface active agent, acetic acid and hydrogen fluoride.

### Claim 4 (depends on 1)

The method of claim 1, wherein the removal of the impurity layer on one major surface of the semiconductor substrate and mirror surface finish of the exposed substrate surface are carried out by polishing.

### Claim 5 (depends on 1, 2)

The method of claim 1 and 2, wherein the formation of said first and second insulating films is carried out by thermal oxidation.