Method for fabricating semiconductor device
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorYoshihisa Mizutani
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Abstract
A method is provided for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove; irradiating part of said semiconductor layer on said groove with an energy beam to convert said part into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing said energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body. The method of the invention allows photolithography with good precision.
Claims8
A method for fabricating a semiconductor device comprising the steps of:
- forming a groove on the surface of an insulator body;
- forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove;
- irradiating part of said semiconductor layer formed on said groove with an energy beam to convert said part into single crystals;
- and
- irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body.
A method for fabricating a semiconductor device comprising the steps of:
- forming a groove on the surface of an insulator body;
- forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove;
- irradiating part of said semiconductor layer formed on said groove with an energy beam to convert said part into single crystals;
- irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body;
- forming an insulating layer on said continuous single crystal semiconductor layer;
- forming a groove on the surface of an insulating layer;
- forming a polycrystalline or amorphous semiconductor layer on the surface of said insulating layer including said groove;
- irradiating part of said semiconductor layer formed on said groove of said insulating layer with an energy beam to convert said part into single crystals;
- and
- irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulating layer.
A method for fabricating a semiconductor device comprising the steps of:
- forming a plurality of grooves of different cross sectional shapes spaced apart from each other on the surface of an insulator body;
- forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said grooves;
- irradiating parts of said semiconductor layer on said grooves with an energy beam to convert said parts into single crystals;
- and
- irradiating the remaining part of said semiconductor layer with said energy beam while displacing said energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a plurality of single crystal semiconductor layers having different crystal planes on said insulator body.
Dependencies are inferred from the claim text.