# US 4,383,003 A · Transfer lamination of copper thin sheets and films, method and product

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- Number: US 4,383,003 A
- Document ID: US4383003A
- Status: Granted
- Kind: A
- Application number: 06/189,003
- Filed: 1980-09-22
- Granted: 1983-05-10
- Earliest claimed: 1980-09-22
- Assignees: General Electric Company
- Inventors: Eric Lifshin; Joseph D. Cargioli; Stephen J. Schroder; Joe Wong
- Web page: https://patentgrep.com/patent/US4383003A

## CPC

- C23C 14/0005: {Separation of the coating from the substrate}
- H05K 3/025: {by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper}
- H05K 3/388: {by the use of a metallic or inorganic thin film adhesion layer}
- H05K 3/382: {by special treatment of the metal}
- H05K 3/389: {by the use of a coupling agent, e.g. silane}
- H05K 2201/0317: Thin film conductor layer; Thin film passive component
- H05K 2201/0355: Metal foils
- H05K 2203/0152: Temporary metallic carrier, e.g. for transferring material
- Y10T 428/12465: having magnetic properties, or preformed fiber orientation coordinate with shape
- Y10T 428/12549: Adjacent to each other
- Y10T 428/12556: Organic component
- Y10T 428/12604: Film [e.g., glaze, etc.]
- Y10T 428/12611: Oxide-containing component
- Y10T 428/12792: Zn-base component
- Y10T 428/12903: Cu-base component
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A copper-clad laminate having special utility in the production of high resolution printed circuit patterns by either subtractive or semi-additive processing is made by vapor depositing a film of zinc on a copper film on a silica-coated aluminum carrier sheet, vapor depositing a silica film on the resulting zinc-copper foil, bonding the resulting body to a substrate and then stripping the silica-coated aluminum carrier sheet from the copper-clad laminate.

## Claims

### Claim 1

A metal-clad laminate comprising a substrate, a layer of copper and bonding means located between said substrate and said copper layer for bonding said substrate and copper layer together, said bonding means consisting of an ultra-thin film of zinc on said copper layer together with an ultra-thin film of oxide selected from the group consisting of aluminum oxide and silicon dioxide disposed between and in contact with said zinc film and said substrate.

### Claim 2 (depends on 1)

The invention of claim 1 in which the copper layer is present as vapor deposited film of thickness less than about 16 microns.

### Claim 3 (depends on 1)

The invention of claim 1 in which the oxide is silicon dioxide.

### Claim 4

A laminate product comprising a thin copper sheet, an ultra-thin film of zinc vapor deposited on said copper sheet and a film of silica vapor deposited on said zinc film.

### Claim 5 (depends on 4)

The laminate product of claim 4 in which a portion of the surface of the zinc film between the zinc and the silica is characterized by the presence of whisker-like dendrites of zinc.

### Claim 6 (depends on 4)

The invention of claim 4 in which a coating of silane coupling agent is located over the silica film.