Epitaxial crystal fabrication of SiC:AlN

A process for growing a crystal of (SiC).sub.x (AlN).sub.1-x wherein x is about 0.2 to about 0.5, which comprises:

• providing an Al.sub.2 O.sub.3 substrate;
• providing a first source for SiC and a second source for AlN in proximity to said substrate;
• heating said first and second sources to the range of about 1900.degree. to about 2020.degree. C. in the presence of N.sub.2 +H.sub.2 gas flowing over said sources in the direction towards said substrate.