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US 4,382,265 AGranted
Heterojunction semiconductor device
AssigneeThomson-CSF
InventorThomas Pearsall
Life of this patent
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Abstract
A heterojunction semiconductor device comprising an active zone made from a ternary or quaternary alloy of the Ga In As P type and resting via a buffer layer of similar composition on a substrate in such a way that the active layer and the buffer zone have similar expansion coefficients.
Claims1
A heterojunction semiconductor device, capable of operating as an electroluminescent diode, comprising:
- a substrate made of indium phosphide;
- a first layer deposited on said substrate, said layer having a composition responding to the formula:
- Ga.sub.x3 In.sub.1-x3 As.sub.y3 P.sub.1-y3
- a second layer deposited on said first layer, said second layer having a composition responding to the formula:
- Ga.sub.x4 In.sub.1-x4 As.sub.y4 P.sub.1-y4
- and
- a third layer deposited on said second layer and of the same composition as said first layer wherein the width of the second layer is less than the width of the first or third layer and x.sub.3 =0.1;
- y.sub.3 =0.22;
- x.sub.4 =0.27 and y.sub.4 =0.59.
6 more elements
Dependencies are inferred from the claim text.