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US 4,381,952 AGranted
Method for fabricating a low loss varactor diode
AssigneeRCA Corporation
InventorArye Rosen
Life of this patent
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Abstract
A low conductivity, first conductivity type epitaxial layer is formed on a substrate of high conductivity, first conductivity type semiconductor material. Conductivity modifiers of second conductivity type are then implanted into the epitaxial layer so as to create a PN junction in the epitaxial layer. The substrate is next thinned, and conductivity modifiers of first conductivity type are implanted into the thinned surface so as to form a very high conductivity layer at the thinned surface.
Claims10
A method for fabricating a low loss varactor diode, comprising the steps of:
- providing a high conductivity first conductivity type semiconductor substrate;
- epitaxially forming a low conductivity first conductivity type semiconductor layer on said substrate;
- implanting conductivity modifiers of second conductivity type into said epitaxial layer so as to form a very high conductivity layer at the surface thereof, said implanted layer forming a PN junction with said epitaxial layer;
- thinning the substrate so as to form a thinned surface;
- and
- implanting conductivity modifiers of first conductivity type into the thinned surface so as to form a very high conductivity layer at said surface.
3 more elements
Dependencies are inferred from the claim text.