Method of making anode and cathode connections for electromigration
AssigneeGeneral Electric Company
InventorThomas R. Anthony
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Abstract
In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful in the practice of electromigration and connections which are especially useful in circumventing the adverse effects of several types of rectifying junctions encountered in the practice of electromigration.
Claims31
A method for making connections useful in the practice of electromigration comprising the steps of:
- (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces;
- (b) forming a first layer of an insulating material on said first major surface;
- (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface;
- (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated;
- and
- (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit.
A method for making connections useful in the practice of electromigration comprising the steps of:
- (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces;
- (b) forming a first layer of an insulating material on said first major surface;
- (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface;
- (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated;
- and
- (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit, said conducting material having a melting temperature lower than the electromigration temperature.
A method for making connections useful in the practice of electromigration comprising the steps of:
- (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces;
- (b) forming a first layer of an insulating material on said first major surface;
- (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface;
- (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated;
- and
- (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit, said conducting material having a melting temperature higher than the electromigration temperature.
Dependencies are inferred from the claim text.