Process for preparing multilayer interconnection
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMasahiko Denda, Shinichi Sato, Wataru Wakamiya, Hiroshi Harada, Natsuro Tsubouchi, Hirokazu Miyoshi
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Abstract
A multilayer interconnection is prepared by forming a stable insulating film on a nitride film which is formed on a first interconnection metal layer, and then, a second interconnection metal layer is formed on the insulating film. The insulating film can be made of aluminum oxide, an oxynitride or the other metal oxide. A silicon rich layer can be used for this purpose.
Claims2
A process for preparing a multilayer interconnection which comprises sequentially forming a first interconnection metal layer, a layer insulating film and a second interconnection metal layer, wherein said interconnection metal layer is made of a low melting metal and said layer insulating film is made of a plasma enhanced chemical vapor deposited nitride film and an oxynitride film is formed on the surface layer of said nitride film so as to prevent mutual diffusion between the second interconnection metal layer and said nitride film.
Dependencies are inferred from the claim text.