Solid state image sensor
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorNozomu Harada
Life of this patent
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Abstract
A MOSFET consisting of a source region, a drain region and a gate layer is formed on a p-type semiconductor substrate. Field insulation layers are formed to surround the MOSFET, and conductive electrodes are formed thereover. A photosensing layer is overlayed on this structure. This photosensing layer is made of an amorphous chalcogen glass semiconductor material, for example Se-As-Te, and is in contact with the source region through an opening. A charge packet generated within the photosensing layer is transferred to the source region by an electric field induced when a voltage is applied to the conductive electrodes.
Claims12
A solid state image sensor comprising:
- a semiconductor substrate of a first conductivity type having a surface portion;
- an active region of a second conductivity type opposite to said first conductivity type and formed at the surface portion of said substrate;
- field insulation layers formed on said substrate and surrounding said active region;
- a photosensing layer of a semiconductor material formed on said substrate and said insulation layers and generating a charge packet corresponding to the incident light;
- and
- charge transfer means for generating within said photosensing layer an electric field having substantial components extending substantially parallel to the surface of said substrate to transfer the charge packet generated by the incident light within said photosensing layer toward said active region, said charge transfer means including electrode means formed in said photosensing layer and made of conductive material for receiving a bias potential applied thereto and for generating said electric field between said active region and said electrode means.
Dependencies are inferred from the claim text.