# US 4,381,202 A · Selective epitaxy by beam energy and devices thereon

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- Number: US 4,381,202 A
- Document ID: US4381202A
- Status: Granted
- Kind: A
- Application number: 06/247,376
- Filed: 1981-03-25
- Granted: 1983-04-26
- Earliest claimed: 1980-03-27
- Assignees: Fujitsu Limited
- Inventors: Haruhisa Mori; Tsutomu Ogawa; Takashi Matsumoto
- Web page: https://patentgrep.com/patent/US4381202A

## CPC

- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 62/40: Crystalline structures
- H10P 32/1414: {the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon}
- H10P 32/171: {being group IV material}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- Y10S 148/046: Electron beam treatment of devices
- Y10S 148/09: Laser anneal
- Y10S 148/091: Laser beam processing of fets
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A semiconductor device in which an insulating layer having a window is formed on a semiconductor substrate, a semiconductor layer is formed on the insulating layer and a semiconductor element is formed on the semiconductor layer, has the advantages of high-speed operation and low power consumption. A conventional manufacturing method involves a high-temperature, time-consuming step by which the semiconductor layer for forming thereon the semiconductor element is formed so that it may have a proper impurity concentration. In the present invention, however, a portion of the semiconductor layer and a portion of the underlying substrate are rendered molten by annealing with an energy beam as of a laser, by which an impurity contained in the substrate is diffused into the semiconductor layer. Accordingly, no high-temperature, time-consuming step is involved in the present invention, permitting the production of a semiconductor device of excellent characteristics.

## Claims

### Claim 1

A method for the manufacture of a semiconductor device comprising the steps of:
forming an insulating film on the surface of a semiconductor substrate having a predetermined conductivity type, the insulating film being selectively removed to form therein a window at a predetermined position;
forming a semiconductor layer on the insulating film and the semiconductor substrate exposed through the window; melting the portion of the semiconductor layer corresponding to the window and the portion of the semiconductor substrate corresponding to the window by irradiation with an energy beam to a predetermined depth, by which an impurity in the semiconductor substrate is diffused into the semiconductor layer to impart thereto a predetermined conductivity type of relatively low impurity concentration and, at the same time, make monocrystalline at least that portion of the semiconductor layer corresponding to the window; and
in the substrate is diffused into the semiconductor layer portion and the molten semiconductor layer portion is rendered to single crystalline.

### Claim 2 (depends on 1)

A semiconductor device manufacturing method according to claim 1 wherein the semiconductor layer is a silicon semiconductor layer.

### Claim 3 (depends on 1)

A semiconductor device manufacturing method according to claim 1 wherein the impurity concentration of the semiconductor layer portion is controlled by selecting the melt depth of the substrate.

### Claim 4 (depends on 1)

A semiconductor device manufacturing method according to claim 1 wherein an impurity is introduced beforehand into the portion of the substrate corresponding to the window of the insulating layer.

### Claim 5 (depends on 1)

A semiconductor device manufacturing method according to claim 1 wherein the energy beam is a selected from a photon beam, an electron beam and an ion beam.