US 4,381,201 A · Method for production of semiconductor devices

Abstract

Various improvements applicable to a method for production of a semiconductor device which is produced on a single crystalline semiconductor layer converted from a non-single crystalline semiconductor layer employing an energy ray irradiation process for conversion of non-single crystalline semiconductor to single crystalline semiconductor, including a process to make a scribing process more efficient realized by producing windows along scribe lines, a process for production of a planer type semiconductor device without damaging a converted single crystalline semiconductor layer realized by interposition of a field oxidation process and an energy ray irradiation process, a process enabling deep and uniform distribution of impurities without lateral diffusion in a semiconductor layer and a process for production of an embedded semiconductor resistor realized by employment of a mask made of a material not to allow radiated heat to pass therethrough, and a process for production of a mesa type semiconductor device not to allow discontinuity of wirings realized by employment of an energy ray irradiation process.

Claims20

Dependent claims

A method for production of a semiconductor device comprising the steps of:

(a) forming an insulating layer on the top surface of a semiconductor substrate;
(b) forming a window in the insulating layer along a linear area defining crystal nuclei and a scribe line;
(c) growing a non-single crystalline semiconductor layer on the top surface of the insulating layer;
(d) irradiating the non-single crystalline semiconductor layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to form a single crystalline silicon layer in contact with the substrate at the crystal nuclei;
and
(e) forming semiconductor elements on the single crystalline silicon layer.

3 more elements

A method for production of a semiconductor device comprising the steps of:

(a) forming an insulating layer on a silicon substrate;
(b) forming a first semiconductor layer on the insulating layer;
(c) implanting first ions of a first conductivity type into the first semiconductor layer;
(d) converting the first semiconductor layer into a semiconductor layer having a periodic structure by irradiating the first semiconductor layer with an energy ray selected from a group comprising a photon beam, an ion beam and an electron beam;
(e) selectively forming a mask on the first semiconductor layer, the mask made of a material which prevents radiated heat from radiating to the first semiconductor layer;
(f) selectively implanting second ions having a second conductivity type into selected areas of the first semiconductor layer defined by the mask;
and
(g) annealing the selected areas of the first semiconductor layer to uniformly diffuse the second ions into the first semiconductor layer in self-alignment with the mask.

5 more elements

Dependencies are inferred from the claim text.

Method for production of semiconductor devices

Life of this patent

Method for production of semiconductor devices

Life of this patent

Abstract

Claims20