Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process

Abstract

In-situ, non-destructive monitoring of semiconductors during laser annealing process is realized by a method the steps of which include: positioning a surface acoustic wave device adjacent to the semiconductor being annealed and in intercepting relationship with the annealing radiation, the surface acoustic wave device substrate being transparent to the annealing radiation; affixing an electrical contact to the top surface of the semiconductor; applying an r.f. input to the surface acoustic wave device; and measuring the transverse acousto- electrical voltage on the electrical contact. The surface acoustic wave propagation surface of the surface acoustic wave device is in close proximity to the bottom surface of the semiconductor and interaction of the electric field that accompanies the propagating surface acoustic wave with the charge carriers of the semiconductor produces the transverse acoustoelectric voltage. The transverse acoustoelectric voltage is thus a function of the semiconductor conductivity.

Dependencies are inferred from the claim text.