Method of making a semiconductor laser by liquid phase epitaxial growths
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakashi Sugino, Kunio Itoh
Life of this patent
Estimating the term…
Abstract
In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape, the improvement is that said substrate has a terrace part on its principle face, said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region in between and said stripe shape active region is disposed with a specified angle to said principle face.
Claims4
A method of making a semiconductor laser by liquid phase epitaxial growths comprising the steps of
- forming a terrace part with a specified step on a principal face of a semiconductor substrate,
- growing a first clad layer on said semiconductor substrate in a manner to have a thick part of the foot of said specified step,
- growing an active layer having an oblique part disposed on the part of the foot of said step, in a manner to have a pair of parallel bent parts between said oblique part and upper and lower horizontal parts,
- growing a second clad layer having the opposite conductivity type to that of said first clad layer on said active layer,
- growing an electrode contacting layer,
- forming a current limiting layer having an opening for limiting injection current to the region of said oblique part, and
- diffusing an impurity for ohmic contact into the exposed surface of said electrode contacting layer through said opening at most as far as the bottom of said second clad layer.
Dependencies are inferred from the claim text.