Self aligned aluminum polycrystalline silicon contact
AssigneeRCA Corporation
InventorAlvin M. Goodman
Life of this patent
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Abstract
An improved self-aligned conductive gate member formed by suppressing or decreasing the size of the as-deposited grains of polysilicon and by suppressing further grain growth which may occur during a subsequent annealing or processing step. By maintaining the as-deposited grains as small as possible, the initiation of intergranular voids is minimized.
Claims11
In a semiconductor device having a pair of active regions of a first conductivity type embedded in a body of semiconductor material of a second conductivity type at the surface of the body;
- a channel region in the semiconductor body, at the surface thereof, separating the active regions;
- a gate member aligned with the channel region and separated from the semiconductor body by a layer of insulating material and contact means in ohmic contact with each of the active regions and the gate member respectively, the gate member comprising:
- a conductive layer of oxygen doped polycrystalline silicon.
In a semiconductor device having a pair of active regions of a first conductivity type embedded in a body of semiconductor material of a second conductivity type at the surface of the body;
- a channel region in the semiconductor body, at the surface thereof, separating the active regions;
- a gate member aligned with the channel region and separated from the semiconductor body by a layer of insulating material;
- and contact means in ohmic contact with each of the active regions and the gate member respectively, the improvement comprising:
- a conductive layer of oxygen doped polycrystalline silicon disposed over and insulated from the gate member;
- contact means in ohmic contact with each of the active regions;
- and
- contact means in ohmic contact with the oxygen doped polycrystalline silicon layer where the said layer overlies the channel region.
Dependencies are inferred from the claim text.