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AssigneeHitachi, Ltd.
InventorsSachio Ishioka, Yasuharu Shimomoto, Yoshinori Imamura, Saburo Ataka, Yasuo Tanaka, Hirokazu Matsubara, Yukio Takasaki, Eiichi Maruyama
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In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.
A method of producing an image pickup device, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on a predetermined substrate and heating the amorphous silicon layer at a temperature of from 100.degree. to 300.degree. C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm.sup.-1 being larger than the component of a wave number of about 2100 cm.sup.-1.
A method of producing an image pickup tube, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on an image pickup tube substrate comprising a light-transmitting substrate and a transparent electrode and heating the hydrogen-containing amorphous silicon layer at a temperature of from 100.degree. to 300.degree. C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm.sup.-1 being larger than the component of a wave number of about 2100 cm.sup.-1.
A method of producing a solid-state image pickup device, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on a semiconductor substrate including at least an impurity region and a first electrode having contact with at least a part of the impurity region and heating the hydrogen-containing amorphous silicon layer at a temperature of from 100.degree. to 300.degree. C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm.sup.-1 being larger than the component of a wave number of about 2100 cm.sup.-1.
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