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AssigneeGeneral Electric Company
InventorsMinyoung Lee, Lawrence E. Szala, Roy E. Tuft
Estimating the term…
A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.
A process for simultaneously cementing diamond particles together and affixing the cemented diamond particles to a substrate comprising the steps of:
A composite member comprising in combination a polycrystalline diamond mass cemented together by silicon atom-containing binder material, a cobalt-containing cemented carbide substrate, a mass of cobalt-containing bonded diamond fines bonded to said cemented carbide substrate and a layer disposed between said masses of diamond, said layer consisting of unconverted barrier material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof and converted barrier material present as the silicide and as an intermetallic with cobalt, said silicide being disposed on the surface of said unconverted barrier material adjacent said silicon atom-containing diamond mass and said intermetallic being present on the opposite surface of said unconverted barrier material.
Dependencies are inferred from the claim text.