An improved field effect transistor device of the type having a body of semiconductor material, and a plurality of drains, gates and sources operatively disposed on the body of semiconductor material, said field effect transistor device being connected in a differential input and output configuration including a positive gate bus, a negative gate bus, a positive drain bus, a negative drain bus, and a common source bus, wherein the improvement for a single one of a plurality of alternate parallel connected operating units of said field effect transistor device comprises:
- a common source operatively connected to the common source bus;
- first and second drains juxtaposed on opposite sides of said common source, said first drain being operatively connected to the negative drain bus, and said second drain being operatively connected to the positive drain bus;
- first and second gates juxtaposed on opposite sides of said first drain, said first and second gates being operatively connected to the positive gate bus;
- third and fourth gates juxtaposed on opposite sides of said second drain, said third and fourth gates being operatively connected to the negative gate bus;
- and
- positive feedback means including first, second, third and fourth crossover capacitors, said first and second crossover capacitors being operatively connected between the positive gate bus and the positive drain bus at said first gate and said second gate, respectively, and said third and fourth crossover capacitors being operatively connected between the negative gate bus and the negative drain bus at said third gate and said fourth gate, respectively, for minimizing the negative feedback effect of the Miller capacitance beween the positive gate bus and the positive drain bus and said first and second gates and said first drain, and for minimizing the negative feedback effect of the Miller capacitance between the positive gate bus and the positive drain bus and said first and second gates and said second drain.