Current enhanced photovoltaic device

A photovoltaic device formed from multiple layers of amorphous silicon alloys deposited on a substrate which provides improved current generating capability, said device comprising:

• a first doped amorphous silicon alloy layer deposited on said substrate by the flow discharge decomposition of silane gas (SiH.sub.4) and diborane;
• a first intrinsic amorphous silicon alloy layer deposited on said first doped layer by the glow discharge decomposition of at least silane gas (SiH.sub.4);
• a second intrinsic amorphous silicon alloy layer deposited on said first intrinsic layer by the glow discharge decomposition of at least silicon tetrafluoride (SiF.sub.4) and hydrogen and/or silane gas (SiH.sub.4);
• and
• a further doped amorphous silicon alloy layer deposited on said second intrinsic layer by the glow discharge decomposition of at least silicon tetrafluoride (SiF.sub.4), phosphine (PH.sub.3), and hydrogen and/or silane gas (SiH.sub.4).

A multiple cell photovoltaic device formed from multiple layers of amorphous silicon alloys deposited on a substrate which provides improved current generating capability, said device comprising:

• a plurality of single cell units arranged in series relation, each said single cell unit comprising a first doped amorphous silicon alloy layer deposited on said substrate by the glow discharge decomposition of at least silane gas (SiH.sub.4) and diborane;
• a first intrinsic amorphous silicon alloy layer deposited on said first doped layer by the glow discharge decomposition of at least silane gas (SiH.sub.4);
• a second intrinsic amorphous silicon alloy layer deposited on said first intrinsic layer by the glow discharge decomposition of at least silicon tetrafluoride (SiF.sub.4) and hydrogen and/or silane gas (SiH.sub.4);
• and a further doped amorphous silicon alloy layer deposited on said second intrinsic layer by the glow discharge decomposition of at least silicon tetrafluoride (SiF.sub.4), phosphine PH.sub.3, and hydrogen and/or silane gas (SiH.sub.4).

A method of making a photovoltaic device having multiple layers of amorphous semiconductor alloys deposited on a substrate;

• said method comprising the steps of:
• depositing a first doped amorphous semiconductor alloy layer on said substrate;
• depositing a first intrinsic amorphous semiconductor alloy layer on said first doped layer from a non-etching starting material;
• depositing a second intrinsic amorphous semiconductor alloy layer on said first intrinsic layer from a starting material different in composition from said non-etching starting material;
• and
• depositing a further doped amorphous semiconductor alloy layer on said second intrinsic layer from a dopant starting material which renders said further doped layer opposite in conductivity with respect to said first doped amorphous semiconductor alloy layer.