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AssigneeHitachi, Ltd.
InventorsEiichi Maruyama, Sachio Ishioka, Yoshinori Imamura, Hirokazu Matsubara, Yasuharu Shimomoto, Shinkichi Horigome, Yoshio Taniguchi
Estimating the term…
In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.
In an electrophotographic member comprising at least a predetermined supporter having a conductive surface and an amorphous silicon layer which is electrically in contact with said conductive surface and which contains hydrogen and silicon as indispensable constituent elements thereof, the improvement comprising an amorphous silicon layer in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 1 atomic % and, at most, 50 atomic %;
Dependencies are inferred from the claim text.