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US 4,378,410 AGranted
Compliant glass for solid state devices
AssigneeRockwell International Corporation
InventorRobert F. Bailey
Life of this patent
Estimating the term…
Abstract
A solid state device including glass containing SiO.sub.2, consisting essentially of the composition, in percent by weight, in the range of: ______________________________________ SiO.sub.2 95-99.5 Al 0.5 to 5.0. ______________________________________
Claims3
A method of manufacturing a magnetic bubble domain device on a substrate comprising the steps of:
- providing a layer of material which supports magnetic bubble domains on said substrate;
- and
- providing a dielectric layer on the surface of said layer of material to form a composite, and forming a layer of electrically conductive material on said dielectric layer, characterized in that the dielectric layer deposited on the surface of said layer of material comprises a low intrinsic compressive stress material having low shear strength, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of
- ______________________________________ SiO.sub.2 95-99.5 Al 0.5-5.0. ______________________________________
1 more element
A solid state device comprising:
- a first layer of solid state material;
- a layer of dielectric material disposed on said layer of solid sate material, said dielectric layer comprising a low intrinsic compressive stress material having low shear strenght, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of
- ______________________________________ SiO.sub.2 95-99.5 Al 0.5-5.0;
- and ______________________________________
- a layer of electrically conductive material disposed on said layer of dielectric material, said layer of electrically conductive material having a mechanical stress associated therewith which is transmitted to said layer of dielectric material.
2 more elements
A method of providing a glass layer on a solid state device comprising the steps of:
- providing substantially pure SiO.sub.2 in powdered form;
- mixing substantially pure Al in powdered form with the SiO.sub.2 ;
- heating the mixture to form a glass;
- applying the glass to the surface of a solid state device to form a dielectric layer comprising a low intrinsic compressive stress material having low shear strength, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of
- ______________________________________ SiO.sub.2 95-99.5 Al 0.5-5.0. ______________________________________
2 more elements
Dependencies are inferred from the claim text.