Method of manufacturing semiconductor device
AssigneeNippon Gakki Seizo Kabushiki Kaisha
InventorsTerumoto Nonaka, Tadahiko Hotta
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Abstract
A method of manufacturing an SIT or SITL device, comprising simultaneous formation of a gate doping aperture and contact apertures for a source and a drain. Firstly, a gate region is doped through the doping aperture with the contact apertures being covered by a mask. Then, a source region is doped so as to be in self-alignment relation relative to the gate region and a source contact portion is doped so as to be in self-alignment relation relative to the source region and the gate region, whereby the mask alignments are eliminated and packing density is enhanced.
Claims18
A method of manufacturing a semiconductor device comprising:
- a first step of forming, by relying on photolithographic techniques, a doping first aperture and a contact second aperture in an insulation film covering a surface of a semiconductor body having a first conductivity type;
- a second step of forming a first doped region having a second conductivity type opposite to said first conductivity type in a surface portion of said semiconductor body corresponding in position to said doping first aperture, by selectively doping an impurity into said semiconductor body through said doping first aperture in a state that said contact second aperture is covered by a selectively removable masking layer;
- and
- a third step of forming a second doped region having said first conductivitiy type in a surface portion of said semiconductor body corresponding in position to said contact second aperture, by selectively removing said masking layer and then doping an impurity into said semiconductor body through said contact second aperture.
A method of manufacturing a semiconductor device comprising the steps of:
- concurrently forming a gate aperture, a source aperture and a drain aperture in an insulating film covering a semiconductor body,
- providing a mask over said source and drain apertures, said mask being selectively etchable with respect to said insulating film,
- first doping said body through said gate aperture to form a gate region within said body while retaining said mask over said source and drain apertures,
- forming an insulating film in said gate aperture either concurrently with or subsequent to said first doping step,
- selectively removing said mask to expose said source and drain apertures while leaving said insulating film in said gate aperture, and
- second doping said body through said source and drain apertures to form respective source and drain regions within said body, said source and drain regions thereby being self-aligned with said gate region without the use of a separate source and drain defining mask.
Dependencies are inferred from the claim text.