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AssigneeHitachi, Ltd.
InventorsYoshio Sakai, Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Hisao Katto, Norikazu Hashimoto, Shin-ichi Muramatsu, Akihiro Tomozawa
Estimating the term…
A semiconductor device including at least a resistance element formed of polycrystalline silicon having a high resistivity. An electrode is provided on the high resistance polycrystalline silicon region with a silicon dioxide film and a silicon nitride film being interposed therebetween. The electrode is coupled to the ground potential. In this manner, high stability is obtained in the behavior of the resistance element inasmuch as the formation of a parasitic MOS device under said high resistance region is suppressed, and the threshold voltage of any such MOS device is made raised.
A semiconductor device comprising at least a resistance element including a resistance part formed of polycrystalline silicon of a high resistance and p-type conductivity terminal parts formed of polycrystalline silicon of a low resistance at both end portions of said resistance part,
A semiconductor device comprising at least a resistance element including a resistance part formed of polycrystalline silicon of a high resistance and p-type conductivity terminal parts formed of polycrystalline silicon of a low resistance at both end portions of said resistance part, and an electrode provided above said resistance part,
Dependencies are inferred from the claim text.