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US 4,377,563 AGranted
Method of preparing silicon carbide
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorMotoo Seimiya
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Abstract
A method of producing silicon carbide which comprises heating wet process white carbon in the presence of a carbon source.
Claims6
A method of producing .beta.-silicon carbide consisting essentially of heating a mixture consisting of wet process white carbon and a source of carbon in a hydrogen atmosphere to a temperature of 1200.degree. C. to 1600.degree. C., said wet process white carbon being produced by the process of dissociating an alkali metal silicate with an acid, and having a mean particle size between 0.015 and 0.035 micron and a surface area between 50 and 350 m.sup.2 /g.
Dependencies are inferred from the claim text.