Device lithography by selective ion implantation
AssigneeBell Telephone Laboratories, Incorporated
InventorsGary N. Taylor, Thirumalai N. C. Venkatesan
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Abstract
A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide or gallium oxide) on the material. Subsequent etching, which can typically be accomplished by the same plasma, produces a negative tone pattern. Materials other than polymers can be utilized. For example, an indium implant in SiO.sub.2 allows direct pattern generation by exposure to a fluorine plasma, without the use of a separate polymeric resist.
Claims10
A method of making an article including at least one pattern delineation step CHARACTERIZED by selectively implanting an ionic species into a material and exposing the material to a reactive atmosphere, whereby the implanted species forms a nonvolatile protective compound in implanted regions of said material, with said protective compound comprising at least one implanted species and at least one species derived from the reactive atmosphere, so that the regions of said material so protected are etched at a slower rate than unprotected regions when said material is exposed to a plasma, and etching said material in a plasma, thereby producing a negative tone pattern.
Dependencies are inferred from the claim text.