Method of making Schottky barrier diode by selective beam-crystallized polycrystalline/amorphous layer

A method of manufacturing a semiconductor device comprising the steps of:

• forming an insulating layer on a semiconductor substrate;
• selectively removing the insulating layer until the top surface of the semiconductor substrate is exposed to open a plurality of windows, including a window in which to form a Schottky barrier diode and windows in which to form electrodes;
• forming a polycrystalline or amorphous semiconductor layer covering the exposed surface of the semiconductor substrate and the remaining insulating layer;
• applying an energy beam to the polycrystalline or amorphous semiconductor layer at least in the window in which to form the Schottky barrier diode to convert the polycrystalline or amorphous semiconductor layer ito a single-crystal semiconductor layer;
• depositing a Schottky barrier diode forming metal layer on the single-crystal semiconductor layer to form a Schottky barrier contact between the metal layer and the single-crystal semiconductor layer;
• and
• depositing an electrode forming metal layer on the semiconductor layer in each of the windows in which to form electrodes to form an ohmic contact between the metal layer and the semiconductor layer.