Metallization of selectively implanted A.sub.III -B.sub.V compound semiconductors
AssigneeSiemens Aktiengesellschaft
InventorsEwald Pettenpaul, Jakob Huber, Herbert Weidlich
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Abstract
Fabricating a semiconductor arrangement with a semiconductor body of an A.sub.III -B.sub.V compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metallization is required.
Claims7
Method for fabricating a semiconductor arrangement using phototechnique processes and a semiconductor body of an A.sub.III -B.sub.V compound, which comprises doping a semiconductor body of an A.sub.III -B.sub.V compound with a first doping substance in a concentration to produce non-barrier zones at parts of the surface of the semiconductor body, and with a second doping substance in a concentration to produce barrier zones at other parts of the semiconductor surface, and applying only one metallization to the surface to obtain barrier and non-barrier contacts on the different zones.
Method for fabricating a semiconductor arrangement with a semiinsulating substrate as a semiconductor body of an A.sub.III -B.sub.V compound, which comprises doping a semiconductor body of an A.sub.III -B.sub.V compound with different doping substances on different zones of the semiconductor body to form barrier and non-barrier zones, and applying only one metallization to the surface to obtain barrier and non-barrier contacts on the differend zones and wherein
- (a) at least one first conducting layer is placed by a local ion implantation with a dose of 10.sup.12 to 10.sup.14 atoms/cm.sup.2 of one of the elements selected from the group consisting of Te, S, Se and Si on an exposed surface or a surface covered with a thin passivating layer of the substrate so that the first year contains 1.times.10.sup.15 to 5.times.10.sup.17 doping atoms/cm.sup.3,
- (b) at another place, placing at least one second conducting layer by local ion implantation with a dose of 10.sup.14 to 10.sup.17 atoms/cm.sup.2 of the element Ge on an exposed surface, or a surface covered with a thin passivating layer of the substrate so that the second layer contains more than 10.sup.18 doping atoms/cm.sup.3, and
- (c) depositing a single metal layer for preparing barrier and non-barrier contacts, barrier contacts being generated on the first layer and conducting contacts on the second layer.
Method for fabricating a semiconductor arrangement with a semiconductor body of an A.sub.III -B.sub.V compound, which comprises doping a semiconductor body of an A.sub.III -B.sub.V compound with different doping substances on different zones of the semiconductor body to form barrier and non-barrier zones, and applying only one metallization to the surface to obtain barrier and non-barrier contacts on the different zones, wherein the semiconductor substrate with a doping concentration of more than 10.sup.17 impurities/cm.sup.3, by
- (a) generating a surface layer 0.5 to 5 .mu.m thick with 10.sup.15 to 5.times.10.sup.17 impurities/cm.sup.3 by diffusion or ion implantation,
- (b) at another place, placing at least one conducting layer by local implantation with a dose of 10.sup.14 to 10.sup.17 atoms/cm.sup.2, of the element Ge on an exposed surface, or a surface covered with a thin passivating layer, of the semiconductor body, so that the layer contains more than 10.sup.18 doping atoms/cm.sup.3, and
- (c) depositing a single metal layer for preparing barrier and non-barrier contacts, barrier contacts being generated on the surface layer and conducting contacts on the conducting layer.
Dependencies are inferred from the claim text.