Programmable read-only memory device
AssigneeFujitsu Limited
InventorsToshitaka Fukushima, Kazumi Koyama, Kouji Ueno
Life of this patent
Estimating the term…
Abstract
A PROM (programmable read-only memory) device includes both PROM cells and peripheral circuits cooperating therewith with the PROM cells and peripheral circuits formed in and on the same bulk. The bulk is formed free of metal which acts as a life time killer. Further, in each of the PROM cells, a buffer layer made of a silicon semiconductor, is introduced between a metal electrode, acting as a bit line, and the surface of the bulk at the position where the PROM cell is formed. Furthermore, the peripheral circuits are made by using Schottky TTL (transistor transistor logic) circuits.
Claims30
A PROM device, comprising:
- a semiconductor bulk, both PROM cells and peripheral circuits cooperating therewith formed in and on the same semiconductor bulk, and wherein each of the PROM cells comprise:
- a first pn junction and a second pn junction in series, both formed in said bulk;
- a metal electrode for use as a bit line, formed on the surface of the bulk adjacent to the second pn junction, the second pn junction being broken or not broken in accordance with data to be stored, said bulk being formed free of metal which acts as a life time killer;
- and
- a buffer layer, made of semiconductor material and formed between said metal electrode and the surface of said bulk, for preventing a metal-semiconductor eutectic from smoothly and deeply entering into the bulk toward said second pn junction, which metal-semiconductor eutectic grows, in the usual manner, between said metal electrode and said buffer layer during a heating process.
A PROM cell of the type having first and second junctions opposed in series, information being permanently stored in said PROM cell by selectively short circuiting said first junction, said PROM cell comprising:
- a substrate, comprising a semiconductor material of a first conductivity type;
- a epitaxial layer atop said substrate, comprising a semiconductor material of a second conductivity type;
- a first region in said epitaxial layer and spaced from said substrate, said first region comprising a semiconductor material of said first conductivity type and forming a first pn junction with said second conductivity type semiconductor material of said epitaxial layer;
- a second region in and spaced from said first pn junction, said second region comprising a semiconductor material of said second conductivity type and forming a second pn junction with said first conductivity type semiconductor material of said first region;
- a buffer layer atop said second region;
- and
- a metallic contact atop said buffer layer;
- said buffer layer preventing a metal-type semiconductor eutectic, formed of the metallic material of said metallic contact and the semiconductor material of said second region and which grows in the absence of said buffer layer during normal heating processes, from entering deeply into said epitaxial layer and towards said second pn junction.
A PROM using PROM cells of the type having first and second junctions opposed in series, information being permanently stored in each said PROM cell by selectively short circuiting said first junction, each said PROM cell comprising:
- a substrate, comprising a semiconductor material of a first conductivity type;
- an epitaxial layer atop said said substrate, comprising a semiconductor material of a second conductivity type;
- a first region in said epitaxial layer and spaced from said substrate, said first region comprising a semiconductor material of a second conductivity type and forming a first pn junction;
- a second region in said first region and spaced from said first pn junction, said second region comprising a semiconductor material of said second conductivity type and forming a second pn junction;
- a buffer layer, atop said second region;
- and
- a metallic contact atop said buffer layer;
- said buffer layer preventing a metal-type semiconductor eutectic, formed of the metallic material of said metallic contact and the semiconductor material of said second region and which grows in the absence of said buffer layer during normal heating processes, from entering deeply into said epitaxial layer and towards said second pn junction
- said PROM device further comprising:
- a word line, comprising a semiconductor material having relatively high conductivity and being of said second conductivity type, said word line being adjacent to and in contact with said epitaxial layer.
A PROM using PROM cells of the type having first and second junctions opposed in series, information being permanently stored in each said PROM cell by selectively short circuiting said first junction, each said PROM cell comprising:
- a substrate, comprising a semiconductor material of a first conductivity type;
- an epitaxial layer in said said substrate, comprising a semiconductor material of a second conductivity type;
- a first region in said epitaxial layer and spaced from said substrate, said first region comprising a semiconductor material of a second conductivity type and forming a first pn junction;
- a second region in said first region and spaced from said first pn junction, said second region comprising a semiconductor material of said second conductivity type and forming a second pn junction;
- a buffer layer atop said second region;
- and
- a metallic contact atop said buffer layer;
- said buffer layer preventing a metal-type semiconductor eutectic of the metallic material of said metallic contact and the semiconductor material of said second region which grows in the absence of said buffer layer during normal heating processes, from entering deeply into said epitaxial layer and towards said second pn junction;
- said PROM device further comprising:
- a word line comprising a semiconductor material having relatively high conductivity and being of said second conductivity type, said word line being adjacent to and in contact with said epitaxial layer;
- first isolation regions, parallel to said word line, extending vertically upward from said substrate;
- and
- second isolation regions, perpendicular to said word line, extending vertically upward from said word line and from said substrate without breaking and continuity of said word line.
Dependencies are inferred from the claim text.