Method of producing image sensor
AssigneesNippon Telegraph & Telephone Public Corporation, Matsushita Electric Industrial Co., Ltd., Matsushita Graphic Communication Systems, Inc.
InventorsKazumi Komiya, Toshio Yamashita, Masaru Ohno
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Abstract
An image sensor having a photoconductor array comprising tightly adherent CdS-CdSe or CdS-CdTe photoconductive solid solution thin film and having fast photoresponse speed and excellent spectral sensitivity characteristics.
Claims2
A method of producing a contact type image sensor, which comprises forming a thin CdS film on an insulating substrate by chemical deposition or chemical spray, forming on this film a thin CdSe or CdTe film, subjecting said two layers to an activating heat treatment in an atmosphere containing vapor of at least one of the halides of Cd which is a common flux for said two layers at a temperature above the eutectic temperature of said two layers and said Cd halide, thereby turning said two layers into a solid solution, then selectively removing said solid solution layer to form a plurality of photoconductor islands, and further forming the electrodes connecting to said photoconductor islands.
A method of producing a contact type image sensor, which comprises forming a thin CdS film on an insulating substrate by chemical desposition or chemical spray, forming on this film a thin CdSe or CdTe film, selectively removing said two layers to form a plurality of islands and then subjecting same to an activating treatment in an atmosphere containing vapor of at least one halide of Cd which is a common flux for said two layers at a temperature above the eutectic temperature of said two layers and said Cd halide, thereby turning said two layers into a solid solution to form a plurality of photoconductor islands, and further forming the electrodes connecting to said photoconductor islands.
Dependencies are inferred from the claim text.