Method for producing semiconductor films
AssigneeXerox Corporation
InventorsGerald P. Ceasar, Scott F. Grimshaw
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Abstract
A method for producing semiconducting films on a substrate wherein a plasma of a reactive gas is generated and an ion beam from the plasma is directed and accelerated toward a target of material of which the film is to be formed. The target which is maintained in a vacuum chamber at reduced pressure, is sputtered with the reactive ion beam and the material sputtered off the target is collected as a film on a substrate which is physically isolated from the plasma generating process and the sputtering process. Preferably the reactive gas is present in a mixture with an inert gas heavier than the reactive gas.
Claims16
A method for producing semiconducting films on a substrate comprising generating a plasma of reactive gas, extracting, accelerating and directing an ion beam from said plasma toward a target of material of which the film is to be formed, said target being maintained in a vacuum chamber at reduced pressure, sputtering said target with said reactive ion beam to sputter the target material, collecting said sputtered target material as a film on said substrate, said substrate being physically isolated from the plasma generating process and the sputtering process.
Dependencies are inferred from the claim text.