Back to results
US 4,376,009 AGranted
Limp-stream method for selectively etching integral cathode substrate and support
AssigneeRCA Corporation
InventorPeter J. Kunz
Life of this patent
Estimating the term…
Abstract
In a method for preparing an integral cathode substrate and support in which selected surface portions of a formed metal part are masked, the unmasked surface portions etched, and then the mask removed, the improvement wherein the etching step is conducted by alternately directing a solid limp stream of liquid etchant into and out of contact with the part while permitting the liquid etchant to drain away from the part by gravity.
Claims10
In a method for preparing an integral cathode substrate and support including
- (a) providing a formed metallic part, said part including a cathode substrate and an integral support therefor,
- (b) masking selected portions of the surface of said part with an etch-resistant mask,
- (c) etching the unmasked portions of said surface to a desired depth
- (d) and then removing said mask, the improvement wherein said etching step is conducted by alternately directing a solid limp stream of liquid etchant into and out of contact with said part while permitting said liquid etchant to drain away from said part by the force of gravity.
1 more element
Dependencies are inferred from the claim text.