Method of growing oxide layer on indium gallium arsenide
AssigneeBell Telephone Laboratories, Incorporated
InventorsRobert E. Nahory, Benjamin Tell
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Abstract
A method of growing a water insoluble native plasma oxide on an In.sub.0.53 Ga.sub.0.47 As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.
Claims6
In a process for growing an oxide on an epitaxial layer consisting primarily of indium, gallium and arsenic by exposing the layer to a plasma of oxygen, the step of exposing the layer to water vapor during the growth of the oxide.
A process for growing an oxide on an epitaxial layer of a semiconductor structure consisting primarily of indium, gallium and arsenic comprising the steps of evacuating a growth chamber to a predetermined vacuum level, flowing oxygen and water vapor into said growth chamber to achieve a predetermined level of pressure, creating a plasma discharge within said growth chamber, and applying a positive potential to an electrode surface that supports the semiconductor structure having said epitaxial layer.
Dependencies are inferred from the claim text.